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IRF720

N-CHANNEL POWER MOSFETS

FEATURES ?LowerRDS(on) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperationarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF720

N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversanddriversandotherpulsecircuits. ?LowRDs(on) ?VGS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF720

TRANSISTORS N-CHANNEL

400Volt,1.8OhmHEXFETTO-220ABPlasticPackage TheHEXFET?technologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistor. FEATURES: ■RepetitiveAvalancheRatings ■Dynamicdv/dtRatings ■SimpleDriveRequirement ■EaseofParalleling

IRF

International Rectifier

IRF720

3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF720

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF720

isc N-Channel MOSFET Transistor

DESCRITION ·Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF720

400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package

400Volt,1.8OhmHEXFETTO-220ABPlasticPackage TheHEXFETtransistorsalsofeatureallofthewellestablishedadvantagesofMOSFETssuchasvoltagecontrol,veryfastswitching,easeofparallelingandtemperaturestabilityoftheelectricalparameters. Theyarewellsuitedforapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF720

N-Channel Power MOSFETs

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRF720

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF720

N-channel enhancement mode power mos transistors

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF720

  • 功能描述：

    MOSFET N-Chan 400V 3.0 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
2015+
TO-220
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
IR
23+
TO-220
19526
詢價(jià)
IR
24+
TO-220
2560
絕對(duì)原裝!現(xiàn)貨熱賣!
 詢價(jià)
IR
24+
TO-220
5000
詢價(jià)
IR
17+
TO-220
6200
詢價(jià)
IR
06+
TO-220
8000
原裝
 詢價(jià)
IR
23+
TO-220
8000
全新原裝現(xiàn)貨
 詢價(jià)
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
 詢價(jià)
ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
IR
24+
原廠封裝
2000
原裝現(xiàn)貨假一罰十
 詢價(jià)
更多IRF720供應(yīng)商 更新時(shí)間2025-2-28 16:19:00

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