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IRF7101PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF7101PBF規(guī)格書詳情
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Adavanced Process Technology
● Ultra Low On-Resistance
● Dual N-Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● Dynamic dv/dt Rating
● Fast Switching
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF7101PBF
- 功能描述：
MOSFET 20V DUAL N-CH HEXFET 100mOhms 10nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
SOP-8 |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
IR |
23+ |
SOP8 |
28533 |
原盒原標(biāo),正品現(xiàn)貨 誠信經(jīng)營 價格美麗 假一罰十! |
詢價 | ||
IOR |
SOP-8 |
68900 |
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
22+ |
SOP-8 |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
21+ |
8080 |
只做原裝,質(zhì)量保證 |
詢價 | |||
IR |
21+ |
8-SOIC |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 | ||
International Rectifier |
2022+ |
572 |
全新原裝 貨期兩周 |
詢價 | |||
IR |
23+ |
SOP-8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
Infineon Technologies |
22+ |
8SO |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 |
