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IRF7101PBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF7101PBF規(guī)格書詳情
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
● Adavanced Process Technology
● Ultra Low On-Resistance
● Dual N-Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● Dynamic dv/dt Rating
● Fast Switching
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF7101PBF
- 功能描述：
MOSFET 20V DUAL N-CH HEXFET 100mOhms 10nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
66130 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
IR |
15+ |
SOP8 |
16625 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
Infineon Technologies |
22+ |
8SO |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
ir |
24+ |
500000 |
行業(yè)低價,代理渠道 |
詢價 | |||
IR |
24+ |
65230 |
詢價 | ||||
IOR |
SOP-8 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
IR |
22+ |
SOP-8 |
8000 |
原裝正品支持實(shí)單 |
詢價 | ||
IR |
21+ |
8080 |
只做原裝,質(zhì)量保證 |
詢價 | |||
IR |
24+ |
SOP-8 |
1781 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
2022 |
SOP-8 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 |
