IRF6637中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF6637規(guī)格書詳情
Description
The IRF6637 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
● Lead and Bromide Free
● Low Profile (<0.7 mm)
● Dual Sided Cooling Compatible
● Ultra Low Package Inductance
● Optimized for High Frequency Switching
● Ideal for CPU Core DC-DC Converters
● Optimized for both Sync.FET and some Control FET application
● Low Conduction and Switching Losses
● Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6637
- 功能描述：
MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
QFN |
6000 |
公司只做原裝,假一罰十,可開17%增值稅發(fā)票! |
詢價 | ||
IR |
23+ |
QFN |
3200 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
IR |
23+ |
NA/ |
8013 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
IR |
24+ |
QFN |
16800 |
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
IR |
06+ |
QFN |
710 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
23+ |
QFN |
9896 |
詢價 | |||
Infineon/英飛凌 |
23+ |
MG-WDSON-5 |
25000 |
原裝正品,假一賠十! |
詢價 | ||
Infineon/英飛凌 |
2023+ |
MG-WDSON-5 |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
IR |
2223+ |
26800 |
只做原裝正品假一賠十為客戶做到零風(fēng)險 |
詢價 | |||
Infineon/英飛凌 |
21+ |
MG-WDSON-5 |
6000 |
原裝現(xiàn)貨正品 |
詢價 |
