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IRF3808PBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRF3808PBF
廠商型號(hào)

IRF3808PBF

功能描述

HEXFET Power MOSFET

文件大小

213.27 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2024-10-24 18:02:00

IRF3808PBF規(guī)格書(shū)詳情

Description

Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ? Power MOSFET utilizes the latest process ing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications.

Benefits

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Repetitive Avalanche Allowed up to Tjmax

Typical Applications

● Integrated Starter Alternator

● 42 Volts Automotive Electrical Systems

● Lead-Free

產(chǎn)品屬性

  • 型號(hào):

    IRF3808PBF

  • 功能描述:

    MOSFET MOSFT 75V 140A 7mOhm 150nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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58998
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