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IRF3710SPBF

HEXFET? Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710SPBF_15

Advanced Process Technology

IRF

International Rectifier

IRF3710STRLPBF

AdvancedProcessTechnology

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710STRRPBF

HEXFET?PowerMOSFET

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710Z

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRF3710Z

AdvancedProcessTechnologyUltraLowOn-Resistance

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3710Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF3710Z

N-ChannelEnhancementModeMOSFET

Description TheIRF3710Zusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgat echarge.Itcanbeusedinawidevarietyof applications. GeneralFeatures VDS=100V,ID=60A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRF3710ZGPBF

AdvancedProcessTechnology

VDSS=100V RDS(on)=18m? ID=59A Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimproved

IRF

International Rectifier

IRF3710ZL

AUTOMOTIVEMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRF3710SPBF

  • 功能描述：

    MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
TO-252
21000
原廠原包裝。假一罰十?？砷_13%增值稅發(fā)票。
 詢價
IR
24+
N/A
8000
全新原裝正品,現(xiàn)貨銷售
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
23+
TO-263
9896
詢價
IR
2016+
TO-263
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價
IR
23+
TO-263
8000
專業(yè)優(yōu)勢供應(yīng)
 詢價
IR
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
 詢價
IR
24+
NA
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
 詢價
IR
2020+
原廠封裝
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
 詢價
Infineon
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)
 詢價
更多IRF3710SPBF供應(yīng)商 更新時間2025-2-18 15:00:00

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