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IRF2907ZPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRF2907ZPBF
廠商型號(hào)

IRF2907ZPBF

功能描述

HEXFET Power MOSFET

文件大小

785.48 Kbytes

頁(yè)面數(shù)量

12 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-31 23:00:00

IRF2907ZPBF規(guī)格書詳情

VDSS = 75V

RDS(on) = 4.5m?

ID = 160A

Description

This HEXFET?Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

產(chǎn)品屬性

  • 型號(hào):

    IRF2907ZPBF

  • 功能描述:

    MOSFET MOSFT 75V 170A 4.5mOhm 180nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
Infineon/英飛凌
21+
TO-220AB
6000
原裝現(xiàn)貨正品
詢價(jià)
IR/墨西哥
23+
NA/
3270
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
詢價(jià)
INFINEON/英飛凌
2020+
NA
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價(jià)
INFINEON/英飛凌
22+
TO-220
100000
代理渠道/只做原裝/可含稅
詢價(jià)
IR
2020+
TO-220
2000
原裝優(yōu)勢(shì)庫(kù)存,有意請(qǐng)來電或QQ微信溝通。
詢價(jià)
INFINEON/IR
1907+
NA
4400
20年老字號(hào),原裝優(yōu)勢(shì)長(zhǎng)期供貨
詢價(jià)
IR
06+
TO-220
14
詢價(jià)
IR
23+
TO-220
90000
一定原裝深圳現(xiàn)貨
詢價(jià)
Infineon/英飛凌
23+
TO-220AB
25630
原裝正品
詢價(jià)
IR
11+
TO-220
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價(jià)