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IRF240R

Avalanche Energy Rated N-Channel Power MOSFETs

AvalancheEnergyRatedN-ChannelPowerMOSFETs TheIRF240R,IRF241R,IRF242RandIRF243RareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Thesearen-channelenhancement-modesilicon-gatepowerfield

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF240SMD

N.CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFC240

HEXFETPowerMOSFETDieinWaferForm

IRF

International Rectifier

IRFEA240

HEXFETPOWERMOSFETSURFACEMOUNT(LCC-28)

IRF

International Rectifier

IRFEA240

SimpleDriveRequirements

IRF

International Rectifier

IRFJ240

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFJ240

N-CHANNELPOWERMOSFETFORHI??ELAPPLICATIONS

SEME-LAB

Seme LAB

IRFJ240

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFM240

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFM240

POWERMOSFETTHRU-HOLE(TO-254AA)

200V.N-CHANNEL Features: ■SimpleDriveRequirements ■EaseofParalleling ■HermeticallySealed ■ElectricallyIsolated ■Dynamicdv/dtRating ■Light-weight

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFM240

POWERMOSFETTHRU-HOLE

200V,N-CHANNELHEXFET?MOSFETTECHNOLOGY HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofth

IRF

International Rectifier

IRFM240

SimpleDriveRequirements

IRF

International Rectifier

IRFN240

POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.18ohm,Id=18A)

POWERMOSFETSURFACEMOUNT(SMD-1) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRF

International Rectifier

IRFN240

SimpleDriveRequirements

IRF

International Rectifier

IRFN240SMD

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP240

20A,200V,0.180Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFP240

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=20A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRF

International Rectifier

IRFP240

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclu

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP240

iscN-ChannelMOSFETTransistor

DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage-:VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) ?FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP240

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細參數(shù)

  • 型號:

    IRF240R

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-204AE

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
6000
終端可免費供樣,支持BOM配單
詢價
IR
23+
8000
專注配單,只做原裝進口現(xiàn)貨
詢價
IR
23+
8000
只做原裝現(xiàn)貨
詢價
IR
23+
7000
詢價
GE
1985
25
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
IR
24+
TO-3
10000
詢價
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現(xiàn)貨,特價熱賣!
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IR/MOT
專業(yè)鐵帽
TO-3
67500
鐵帽原裝主營-可開原型號增稅票
詢價
GE
24+
35200
一級代理/放心采購
詢價
更多IRF240R供應(yīng)商 更新時間2024-12-30 14:00:00