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IRF240中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRF240
廠商型號(hào)

IRF240

功能描述

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE

文件大小

101.73 Kbytes

頁面數(shù)量

2

生產(chǎn)廠商 New Jersey Semi-Conductor Products, Inc.
企業(yè)簡(jiǎn)稱

NJSEMI新澤西半導(dǎo)體

中文名稱

新澤西半導(dǎo)體產(chǎn)品股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-1 23:00:00

IRF240規(guī)格書詳情

Part Number BVDSS RDS(on) ID

IRF240 200V 0.18? 18A

The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Features:

● Repetitive Avalanche Ratings

● Dynamic dv/dt Rating

● Hermetically Sealed

● Simple Drive Requirements

● Ease of Paralleling

產(chǎn)品屬性

  • 型號(hào):

    IRF240

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-3

  • 功能描述:

    TRANS MOSFET N-CH 200V 18A 3PIN TO-204AE - Bulk

  • 功能描述:

    Single N-Channel 200 V 125 W 60 nC Hexfet Transistor Through Hole - TO-3

  • 功能描述:

    N CHANNEL MOSFET, 10V, 18A TO-204AE; Transistor

  • Polarity:

    N Channel; Continuous Drain Current

  • Id:

    18A; Drain Source Voltage

  • Vds:

    10V; On Resistance

  • Rds(on):

    180mohm; Rds(on) Test Voltage

  • Vgs:

    200V; Threshold Voltage Vgs

  • Typ:

    4V ;RoHS

  • Compliant:

    No

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