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IRF223中文資料新澤西半導體數(shù)據(jù)手冊PDF規(guī)格書

IRF223
廠商型號

IRF223

功能描述

Nanosecond Switching Speeds

文件大小

135.19 Kbytes

頁面數(shù)量

3

生產廠商 New Jersey Semi-Conductor Products, Inc.
企業(yè)簡稱

NJSEMI新澤西半導體

中文名稱

新澤西半導體產品股份有限公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-29 11:10:00

IRF223規(guī)格書詳情

Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features

? 4.0A and 5.0A, 150V and 200V

? rDS(ON) = 0.8Ω and 1.2£i

? SOA is Power Dissipation Limited

? Nanosecond Switching Speeds

? Linear Transfer Characteristics

? High Input Impedance

? Majority Carrier Device

產品屬性

  • 型號:

    IRF223

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

供應商 型號 品牌 批號 封裝 庫存 備注 價格
IR
23+
TO-220
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
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IR
23+
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50000
全新原裝正品現(xiàn)貨,支持訂貨
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23+
TO-3
50297
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24+
TO-3
10000
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專業(yè)鐵帽
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67500
鐵帽原裝主營-可開原型號增稅票
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IR
22+
TO-3
6000
終端可免費供樣,支持BOM配單
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IR
23+
TO-3
8000
專注配單,只做原裝進口現(xiàn)貨
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2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
IR
2015+
TO-3(鐵帽)
19889
一級代理原裝現(xiàn)貨,特價熱賣!
詢價
IR
23+
TO-3
7000
詢價