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IRF223中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

IRF223
廠商型號

IRF223

功能描述

Nanosecond Switching Speeds

文件大小

135.19 Kbytes

頁面數(shù)量

3

生產(chǎn)廠商 New Jersey Semi-Conductor Products, Inc.
企業(yè)簡稱

NJSEMI新澤西半導(dǎo)體

中文名稱

新澤西半導(dǎo)體產(chǎn)品股份有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-3-22 9:48:00

人工找貨

IRF223價格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

IRF223規(guī)格書詳情

Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features

? 4.0A and 5.0A, 150V and 200V

? rDS(ON) = 0.8Ω and 1.2£i

? SOA is Power Dissipation Limited

? Nanosecond Switching Speeds

? Linear Transfer Characteristics

? High Input Impedance

? Majority Carrier Device

產(chǎn)品屬性

  • 型號:

    IRF223

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

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19889
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