IRF223中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

廠商型號 |
IRF223 |
功能描述 | Nanosecond Switching Speeds |
文件大小 |
135.19 Kbytes |
頁面數(shù)量 |
3 頁 |
生產(chǎn)廠商 | New Jersey Semi-Conductor Products, Inc. |
企業(yè)簡稱 |
NJSEMI【新澤西半導(dǎo)體】 |
中文名稱 | 新澤西半導(dǎo)體產(chǎn)品股份有限公司官網(wǎng) |
原廠標(biāo)識 | ![]() |
數(shù)據(jù)手冊 | |
更新時間 | 2025-3-22 9:48:00 |
人工找貨 | IRF223價格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
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Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 4.0A and 5.0A, 150V and 200V
? rDS(ON) = 0.8Ω and 1.2£i
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Majority Carrier Device
產(chǎn)品屬性
- 型號:
IRF223
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
2016+ |
TO-220 |
4558 |
只做進(jìn)口原裝現(xiàn)貨!假一賠十! |
詢價 | ||
IR |
23+ |
TO-220 |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
IR |
23+ |
TO-3 |
8000 |
專注配單,只做原裝進(jìn)口現(xiàn)貨 |
詢價 | ||
IR |
2022 |
TO-220 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
IR |
23+ |
TO-3 |
50297 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
IR |
2015+ |
TO-3(鐵帽) |
19889 |
一級代理原裝現(xiàn)貨,特價熱賣! |
詢價 | ||
IR |
23+ |
TO-3 |
7000 |
詢價 | |||
IR |
21+ |
TO-220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Infineon(英飛凌) |
23+ |
TO204AA(TO3) |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!! |
詢價 |