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IRF1902PBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書
IRF1902PBF規(guī)格書詳情
Description
These N-Channel HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications..
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering technique.
■ Ultra Low On-Resistance
■ N-Channel MOSFET
■ Surface Mount
■ Available in Tape & Reel
■ Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRF1902PBF
- 功能描述：
MOSFET 20V 1 N-CH HEXFET 85mOhms 5nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
SOP8 |
6000 |
公司只做原裝,假一罰十,可開17%增值稅發(fā)票! |
詢價(jià) | ||
IR |
2020+ |
SO-8 |
15000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
IR |
24+ |
NA |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
原廠封裝 |
9896 |
詢價(jià) | |||
IR |
22+ |
SOP-8 |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
24+ |
SOP |
48000 |
詢價(jià) | ||||
IR |
17+ |
SO-8 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TSOP |
5000 |
原裝正品,假一罰十 |
詢價(jià) | ||
IR |
24+ |
SO-8 |
65300 |
一級(jí)代理/放心購(gòu)買! |
詢價(jià) | ||
IR |
17+ |
SOP-8 |
60000 |
保證進(jìn)口原裝可開17%增值稅發(fā)票 |
詢價(jià) |
