IRF1404中文資料無錫固電數(shù)據(jù)手冊PDF規(guī)格書
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Description
Seventh Generation HEXFET ? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
FEATURES
? Drain Current –ID= 162A@ TC=25℃
? Drain Source Voltage-
: VDSS= 40V(Min)
? Static Drain-Source On-Resistance
: RDS(on) = 0.004Ω (Max)
? Fast Switching
產(chǎn)品屬性
- 型號:
IRF1404
- 功能描述:
MOSFET MOSFET, 40V, 162A, 4 mOhm, 160 nC Qg, TO-220AB
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | ||
IR |
2339+ |
TO-263 |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
IR |
23+ |
TO-220 |
7000 |
詢價 | |||
IR |
21+ |
TO-220 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
IR |
24+ |
TO-263 |
8100 |
絕對原裝現(xiàn)貨,價格低,歡迎詢購! |
詢價 | ||
IR |
22+ |
TO-220 |
8000 |
原裝正品支持實單 |
詢價 | ||
IR |
24+ |
TO-220AB |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
IR |
17+ |
TO-220 |
6200 |
詢價 | |||
IR |
2016+ |
TO262 |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
IR |
24+ |
TO220 |
50000 |
大批量供應(yīng)優(yōu)勢庫存熱賣 |
詢價 |
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