IR2103

HALF-BRIDGE DRIVER

Description TheIR2103(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorLS

IR2103

600 V 半橋柵極驅(qū)動器 IC，具有擊穿保護; ? 專為自舉操作設計的浮動通道\n? 完全運行時的電壓高達 +600 V\n? 容許負瞬態(tài)電壓高\n? 不受 dV/dt 影響\n? 柵極驅(qū)動電源范圍：10 至 20V\n? 欠壓鎖定\n? 3.3V、5V 和 15V 邏輯輸入兼容\n? 防止交叉?zhèn)鲗н壿媆n? 雙通道的匹配傳播延遲\n? 內(nèi)置死區(qū)時間\n? 高邊輸出與 HIN 輸入同相\n? 低邊輸出與 LIN 輸入不同相\n\n優(yōu)勢:\n;

600 V 半橋驅(qū)動器 IC,具有典型的 0.21 A 拉電流和 0.36 A 灌電流，采用 8 引腳 PDIP 封裝，適用于 IGBT 和 MOSFET。也有 8 引腳 SOIC 封裝可選。\n

IR2103

Package：8-DIP（0.300"，7.62mm）；包裝：散裝 類別：集成電路（IC） 柵極驅(qū)動器 描述：IC GATE DRVR HALF-BRIDGE 8DIP

IR2103S

600 V half-bridge gate driver IC with shoot through protection; ? Floating channel designed for bootstrap operation\n? Fully operational to +600 V\n? Tolerant to negative transient voltage\n? dV/dt immune\n? Gate drive supply range from 10 to 20 V\n? Undervoltage lockout\n? 3.3 V, 5 V, and 15 V logic input compatible\n? Cross-conduction prevention logic\n? Matched propagation delay for both channels\n? Internal set deadtime\n? High side output in phase with HIN input\n? Low side output out of phase with LIN input\n\n優(yōu)勢:\n;

600 V Half Bridge Driver IC with typical 0.21 A source and 0.36 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP.\n

IR2103S

HALF-BRIDGE DRIVER

Description TheIR2103(S)arehighvoltage,highspeedpowerMOSFETandIGBTdriverswithdependenthighandlowsidereferencedoutputchannels.ProprietaryHVICandlatchimmuneCMOStechnologiesenableruggedizedmonolithicconstruction.ThelogicinputiscompatiblewithstandardCMOSorLS

IR2103_13

Half-Bridge Driver

IR2103PBF

Half-Bridge Driver

IR2103PBF

Half-Bridge Driver

IR2103PBF

Half-Bridge Driver

IR2103PBF_15

Half-Bridge Driver