首頁 >IR140CSPTR>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-CHANNELPOWERMOSFETS N-CHANNELPOWERMOSFETS | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
N-ChannelPowerMOSFETs,27A,60-100V
| FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
TRANSISTORSN-CHANNEL(Vdss=100V,Rds(on)=0.077ohm,Id=28A) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio | IRF International Rectifier | IRF | ||
28A,100V,0.077Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | Intersil Intersil Corporation | Intersil | ||
RepetitiveAvalancheRatings | IRF International Rectifier | IRF | ||
N-ChannelPowerMOSFETs,27A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
HighPower,HighSpeedApplications DESCRIPTION ?DrainCurrentID=27A@TC=25℃ ?DrainSourceVoltage-:VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.085Ω(Max) ?HighPower,HighSpeedApplications APPLICATIONS ?Switchingpowersupplies | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
HEXFETTRANSISTOR 100Volt,0.077OhmHEXFET TheHEXFET?technologyisthekeytointernationalRectifiersadvancelineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. FEATURES: ■RepetitiveAvalancheRating ■IsolatedandHer | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=100V,Rds(on)=0.077ohm,Id=28A) RDS(on)0.077? ID28A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establi | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
31A,100V,0.077Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspreclud | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ?Designedforapplicationsuchasswitchingregulators,switchingconvertors,motordriversandsoon. FEATURES ?DrainCurrent–ID=31A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.077Ω(Max) ?SOAispowerdissipati | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細(xì)參數(shù)
- 型號(hào):
IR140CSPTR
- 功能描述:
肖特基二極管與整流器 1.0 Amp 40 Volt
- RoHS:
否
- 制造商:
Skyworks Solutions, Inc.
- 產(chǎn)品:
Schottky Diodes
- 峰值反向電壓:
2 V
- 正向連續(xù)電流:
50 mA
- 配置:
Crossover Quad
- 正向電壓下降:
370 mV
- 最大功率耗散:
75 mW
- 工作溫度范圍:
- 65 C to + 150 C
- 安裝風(fēng)格:
SMD/SMT
- 封裝/箱體:
SOT-143
- 封裝:
Reel
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA |
41300 |
專業(yè)電子元器件供應(yīng)鏈正邁科技特價(jià)代理QQ1304306553 |
詢價(jià) | ||
IR |
22+23+ |
FLIPKE |
32775 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
IR |
ROHS+Original |
NA |
41300 |
專業(yè)電子元器件供應(yīng)鏈/QQ 350053121 /正納電子 |
詢價(jià) | ||
IR |
23+ |
FLIPKE |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
1923+ |
NA |
35689 |
原裝進(jìn)口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨 |
詢價(jià) | ||
IR |
23+ |
FLIPKE |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
21+ |
FLIPKE |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
2022 |
FLIPKE |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) | ||
IR |
22+ |
FlipKY-4P |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
NA/ |
39271 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
詢價(jià) |
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