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IQTCQO-250KR

Temperature Compensated Crystal Oscillators

Description ■IQTCXO-250,-251,-252aretemperaturecompensatedcrystaloscillators(TCXOs),providingahighdegreeoffrequencystabilityoverawidetemperaturerange. Waveform ■ClippedSine1Vpk-pkmin ■SquareHCMOS ■ClippedSine0.7Vpk-pkmin PackageOutline ■14pinDILcomp

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

IQTCQO-250KS

TemperatureCompensatedCrystalOscillators

Description ■IQTCXO-250,-251,-252aretemperaturecompensatedcrystaloscillators(TCXOs),providingahighdegreeoffrequencystabilityoverawidetemperaturerange. Waveform ■ClippedSine1Vpk-pkmin ■SquareHCMOS ■ClippedSine0.7Vpk-pkmin PackageOutline ■14pinDILcomp

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

IQTCQO-250KU

TemperatureCompensatedCrystalOscillators

Description ■IQTCXO-250,-251,-252aretemperaturecompensatedcrystaloscillators(TCXOs),providingahighdegreeoffrequencystabilityoverawidetemperaturerange. Waveform ■ClippedSine1Vpk-pkmin ■SquareHCMOS ■ClippedSine0.7Vpk-pkmin PackageOutline ■14pinDILcomp

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

IQTCQO-250KX

TemperatureCompensatedCrystalOscillators

Description ■IQTCXO-250,-251,-252aretemperaturecompensatedcrystaloscillators(TCXOs),providingahighdegreeoffrequencystabilityoverawidetemperaturerange. Waveform ■ClippedSine1Vpk-pkmin ■SquareHCMOS ■ClippedSine0.7Vpk-pkmin PackageOutline ■14pinDILcomp

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

IQTCXO-250

Temperaturecompensatedcrystaloscillators

Description ■IQTCXO-250,-251,-252aretemperaturecompensatedcrystaloscillators(TCXOs),providingahighdegreeoffrequencystabilityoverawidetemperaturerange. Waveform ■ClippedSine1Vpk-pkmin ■SquareHCMOS ■ClippedSine0.7Vpk-pkmin PackageOutline ■14pinDILcomp

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

IRF250

N-CHANNELPOWERMOSFETS

FEATURES ?LowRds(on) ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highvoltage)

SamsungSamsung semiconductor

三星三星半導體

IRF250

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF250

30A,200V,0.085Ohm,N-ChannelPowerMOSFET

ThisN-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseMOSFETsaredesignedforapplicationssuchasswitchingregulators,switchingconverters,motor

Intersil

Intersil Corporation

IRF250

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpowersupplies ·

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF250

50Wto500WHIGHPOWERWIREWOUNDRESISTORSFLATSHAPEDALUMINUMHOUSED

ETCList of Unclassifed Manufacturers

未分類制造商

IRF250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRF250

N-CHANNEPOWERMOSFETS

FEATURES ?LowRds(on))athighvoltage ?ImprovedInductiveruggedness ?Excellenthighvoltagestability ?Fastswitchingtimes ?Ruggedpolysillcongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Highv

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF250

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF250isathree-terminalsilicondevicewithcurrentconductioncapabilityof30A,fastswitchingspeed,lowon-stateresistance,breakdownvoltageratingof200V,andmax.thresholdvoltageof4volts. Theyaredesignedforuseinapplicationssuchasswitchedmodepo

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

IRF250SMD

N.CHANNELPOWERMOSFET

FEATURES ?HERMETICALLYSEALEDSURFACEMOUNTPACKAGE ?SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT ?HIGHPACKINGDENSITIES

SEME-LAB

Seme LAB

IRFC250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRFM250

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFM250

POWERMOSFETTHRU-HOLE(TO-254AA)

PartNumberRDS(on)ID IRFM2500.100?27.4A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductan

IRF

International Rectifier

IRFM250

N??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFM250

SimpleDriveRequirements

IRF

International Rectifier

IRFM250

POWERMOSFETTHRU-HOLE(TO-254AA)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

詳細參數(shù)

  • 型號:

    IQTCQO-250KR

  • 功能描述:

    Temperature Compensated Crystal Oscillators

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17+
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2100
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iQXPRZ
23+
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7300
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iQXPRZ
23+
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7300
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2987
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IQ
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1224
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IQ
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100500
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IQ
23+
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10000
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TI
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245
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589610
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更多IQTCQO-250KR供應商 更新時間2024-11-16 18:52:00