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IPW65R190CFD

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R190CFD

N-Channel MOSFET Transistor

?DESCRITION ?FastSwitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPW65R190CFD

650V CoolMOS C6 CFD POWER Transistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R190CFD7A

650V CoolMOS? CFD7A SJ Power Device

MOSFET 650VCoolMOS?CFD7ASJPowerDevice 650VCoolMOS?CFD7AisInfineonslatestgenerationofmarketleadingautomotivequalifiedhighvoltageCoolMOS?MOSFETs. Potentialapplications SuitableforPFCandDC-DCstagesfor: ?UnidriectionalandbidirectionalDC-DCconverters, ?On-Boardba

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPW65R190CFDA

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPX65R190CFD

MetalOxideSemiconductorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPX65R190CFDA

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRW65R190CFD

MetalOxideSemiconduvtorFieldEffectTransistor

Description CoolMOS?isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS?CFD2seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Applic

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

MMF65R190P

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMF65R190P

650V0.19(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMF65R190PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MMF65R190PTH

650V0.19(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP65R190P

650V0.19(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP65R190PTH

650V0.19(ohm)N-channelMOSFET

MGCHIP

MagnaChip Semiconductor.

MMP65R190PTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SLF65R190SJ

650VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半導(dǎo)體有限公司

SLP65R190SJ

650VN-ChannelMOSFET

MAPLESMIShenzhen Meipusen Semiconductor Co., Ltd

美普森深圳市美普森半導(dǎo)體有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
19+
TO-247
12200
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Infineon(英飛凌)
23+
N/A
12000
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INFINEON
2019
TO-247
23500
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INFINEON/英飛凌
22+
TO-247
9850
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英飛凌
14+
TO-247
163
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INFINEON/英飛凌
21+23+
TO247
8756
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Infineon
23+
N/A
50000
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INFINEON/英飛凌
24+
N/A
5000
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Infineon(英飛凌)
23+
TO-247
7814
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INFINEON
2024+
N/A
70000
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更多IPW65R190CFD供應(yīng)商 更新時(shí)間2024-11-16 10:20:00

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