零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
N-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Standard) | SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
8.0Aand9.0A,150Vand200V,0.4and0.6Ohm,N-ChannelPowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica | Intersil Intersil Corporation | Intersil | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSTHRU-HOLE(TO-204AA/AE) 200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag | IRF International Rectifier | IRF | ||
N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
N-ChannelPowerMOSFETs,12A,150-200V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
HighPower,HighSpeedApplications | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelPowerMosfets | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB |
詳細(xì)參數(shù)
- 型號:
IPT230
- 功能描述:
TRIAC|200V V(DRM)|30A I(T)RMS|PRESS-19
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
臺灣寰達(dá)/DIPTRONICS |
22+ |
SMD |
3000 |
原裝現(xiàn)貨 |
詢價 | ||
FM富滿 |
2117+ |
SOT-23-6 |
315000 |
3000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
FM富滿 |
2021+ |
SOT-23-6 |
4654 |
詢價 | |||
FM/富滿電子 |
23+ |
SOT-23-6 |
22820 |
原裝正品,支持實(shí)單 |
詢價 | ||
FM |
SOT23-6 |
999999 |
全新原裝正品 一級代理假一罰十 長期有貨 |
詢價 | |||
FM富滿 |
2022 |
SOT-23-6 |
5000 |
公司現(xiàn)貨 |
詢價 | ||
FM/富滿 |
24+ |
SOT23-6 |
53250 |
保證原裝富滿FM價格優(yōu)惠 |
詢價 | ||
FM/富滿電子 |
23+ |
SOT23-6 |
96000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
FM/富滿電子 |
24+ |
888800 |
888800 |
詢價 | |||
富滿電子 |
21+ |
SOT23-6 |
50 |
全新原裝鄙視假貨15118075546 |
詢價 |
相關(guān)規(guī)格書
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相關(guān)庫存
更多- IPT2506-BEA
- IPT2506-BEH
- IPT2506-CEB
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- IPT64
- IPTG06A18-11SZCPH16
- IPTG06A18-11SZCSR
- IPTG06E18-11SZC
- IPTG06G18-11SZC
- IPTG06J18-11SZC
- IPTG06MSE18-11SZ
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