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IPP60R190P6中文資料英飛凌數(shù)據(jù)手冊PDF規(guī)格書

IPP60R190P6
廠商型號

IPP60R190P6

功能描述

Metal Oxide Semiconductor Field Effect Transistor

文件大小

1.47544 Mbytes

頁面數(shù)量

15

生產(chǎn)廠商 Infineon Technologies AG
企業(yè)簡稱

Infineon英飛凌

中文名稱

英飛凌科技股份公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-16 10:15:00

IPP60R190P6規(guī)格書詳情

600V CoolMOS? P6 Power Transistor

Description

CoolMOS? is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. CoolMOS? P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation.

Features

? Increased MOSFET dv/dt ruggedness

? Extremely low losses due to very low FOM Rdson *Qg and Eoss

? Very high commutation ruggedness

? Easy to use/drive

? Pb-free plating, Halogen free mold compound

? Qualified for industrial grade applications according to JEDEC(J-STD20

? ?and JESD22)

Applications

? ?PFC stages, hard switching PWM stages and resonant switching stages

? ?for e.g. PC Silverbox, Adapter, LCD & PDPTV, Lighting, Server, Telecom

? ?and UPS.

產(chǎn)品屬性

  • 型號:

    IPP60R190P6

  • 功能描述:

    MOSFET 600V CoolMOS P6 MOSFET 190 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
INFINOEN
24+
TO-220-3
90000
一級代理進口原裝現(xiàn)貨、假一罰十價格合理
詢價
英飛凌
21+
PG-TO220-3
6000
絕對原裝現(xiàn)貨
詢價
INFINEON
21+
TO220
10000
原裝現(xiàn)貨假一罰十
詢價
INFINEON/英飛凌
23+
TO-220
11220
英飛凌優(yōu)勢原裝IC,高效BOM配單。
詢價
INFINEON/英飛凌
22
TO-220
15000
3月31原裝,微信報價
詢價
INFINEON
22+23+
TO-220
8000
新到現(xiàn)貨,只做原裝進口
詢價
Infineon
22+
NA
1616
加我QQ或微信咨詢更多詳細信息,
詢價
Infineon
18+
NA
3000
進口原裝正品優(yōu)勢供應(yīng)QQ3171516190
詢價
inf進口原
22+23+
TO-220
22280
絕對原裝正品全新進口深圳現(xiàn)貨
詢價
INFINEON/英飛凌
新批次
TO-220
4326
詢價