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IPI50R399CP中文資料無錫固電數據手冊PDF規(guī)格書
IPI50R399CP規(guī)格書詳情
? DESCRITION
? Ultra low gate charge
? High peak current capability
? FEATURES
? Static drain-source on-resistance:
RDS(on) ≤0.399?
? Enhancement mode
? Fast Switching Speed
? 100 avalanche tested
? Minimum Lot-to-Lot variations for robust device
performance and reliable operation
產品屬性
- 型號:
IPI50R399CP
- 功能描述:
MOSFET COOL MOS PWR TRANS 560V 0.399 Ohms
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINE0N |
23+ |
NA/ |
990 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO262 |
58000 |
全新原廠原裝正品現貨,可提供技術支持、樣品免費! |
詢價 | ||
Infineon/英飛凌 |
23+ |
PG-TO262-3 |
12700 |
買原裝認準中賽美 |
詢價 | ||
Infineon/英飛凌 |
23+ |
PG-TO262-3 |
25000 |
原裝正品,假一賠十! |
詢價 | ||
Infineon/英飛凌 |
24+ |
PG-TO262-3 |
7188 |
秉承只做原裝 終端我們可以提供技術支持 |
詢價 | ||
Infineon/英飛凌 |
23+ |
PG-TO262-3 |
25630 |
原裝正品 |
詢價 | ||
Infineon/英飛凌 |
2023+ |
PG-TO262-3 |
6000 |
全新原裝深圳倉庫現貨有單必成 |
詢價 | ||
Infineon/英飛凌 |
21+ |
PG-TO262-3 |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
Infineon/英飛凌 |
21+ |
PG-TO262-3 |
6820 |
只做原裝,質量保證 |
詢價 | ||
INFINEON |
24+ |
PG-TO262-3I2PAK(TO |
8866 |
詢價 |