首頁 >IPI075N15N3>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IPI075N15N3 | isc N-Channel MOSFET Transistor ?DESCRITION ?Efficientandreliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤7.5m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandre | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Marking:075N15N;Package:PG-TO262-3;3 Power-Transistor Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS 3 Power-Transistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-Channel150-V(D-S)MOSFET KeyFeatures: ?LowrDS(on)trenchtechnology ?Lowthermalimpedance ?Fastswitchingspeed | AnalogPower Analog Power | AnalogPower | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
MaterialContentDataSheet | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
OptiMOS3Power-Transistor Features ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplications ?Idealforhigh-frequencyswitchingandsynchronousrectification ?Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
詳細(xì)參數(shù)
- 型號:
IPI075N15N3
- 功能描述:
MOSFET OptiMOS 3 PWR TRANST 150V 100A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON/英飛凌 |
2021+ |
TO-262 |
17185 |
原裝進(jìn)口假一罰十 |
詢價 | ||
Infineon(英飛凌) |
23+ |
- |
7793 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
INFINEO |
22+23+ |
TO-262 |
28233 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO262-3 |
10000 |
公司只做原裝正品 |
詢價 | ||
infineon/英飛凌 |
21+ |
TO-262 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
Infineon/英飛凌 |
22+ |
TO262-3 |
6000 |
十年配單,只做原裝 |
詢價 | ||
INFINEO |
TO-262 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
Infineon/英飛凌 |
23+ |
TO262-3 |
6000 |
原裝正品,支持實單 |
詢價 | ||
Infineon/英飛凌 |
23+ |
20000 |
全新、原裝、現(xiàn)貨 |
詢價 | |||
INFINEON/英飛凌 |
23+ |
TO-262 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價 |
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