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RFD14N05

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD14N05

14A,50V,0.100Ohm,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD14N05

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD14N05L

60VN-ChannelMOSFET

Features CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits PeakCurrentvsPulseWidthCurve ?175℃OperatingTemperature VDS(V)=60V ??RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

RFD14N05L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

Features ?14A,50V ?rDS(ON)=0.100? ?TemperatureCompensatingPSPICE?Model ?CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve ?175oCOperatingTemperature ?RelatedLiterature -TB334“GuidelinesforSolderingS

Intersil

Intersil Corporation

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD14N05L

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-channelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingre

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD14N05LSM

14A,50V,0.100Ohm,LogicLevel,N-ChannelPowerMOSFETs

Features ?14A,50V ?rDS(ON)=0.100? ?TemperatureCompensatingPSPICE?Model ?CanbeDrivenDirectlyfromCMOS,NMOS,and TTLCircuits ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve ?175oCOperatingTemperature ?RelatedLiterature -TB334“GuidelinesforSolderingS

Intersil

Intersil Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON
23+
SOT-252
8000
只做原裝現(xiàn)貨
 詢(xún)價(jià)
INFINEON
23+
SOT-252
7000
詢(xún)價(jià)
IR
22+
NA+
6000
終端可免費(fèi)供樣,支持BOM配單
 詢(xún)價(jià)
INFINEON
24+
PG-TO252-3D-PAK(TO
8866
詢(xún)價(jià)
INFINEO
2020+
TO-252
25
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
 詢(xún)價(jià)
INFINE0N
23+
TO-252
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢(xún)價(jià)
infineon
1822+
TO-252
9852
只做原裝正品假一賠十為客戶(hù)做到零風(fēng)險(xiǎn)!!
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infineon
18+
TO-252
41200
原裝正品,現(xiàn)貨特價(jià)
 詢(xún)價(jià)
INFINEON
20+
D-PAK
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
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I
2020+
TO-252
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢(xún)價(jià)
更多IPD14N05供應(yīng)商 更新時(shí)間2025-3-12 15:00:00

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