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零件編號(hào)下載&訂購功能描述制造商&上傳企業(yè)LOGO

IQS360

12ChannelProjectedCapacitiveTouch&ProximityControllerwithTrackpadandKeypadCapability

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF360

TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=0.20ohm,Id=25A)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS THRU-HOLE(TO-204AA/AE) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-s

IRF

International Rectifier

IRF360

RepetitiveAvalancheRatings

IRF

International Rectifier

IRF360

N-ChannelMOSFETTransistor

DESCRIPTION ?siliconGateforfastswitchingatelevate ?rugged APPLICATIONS ?suitedforapplicationssuchas Switchingpowersupplies,motorcontrols,inverters, Choppers,audioamplifiersandhighenergypulsecircuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF360

iscN-ChannelMOSFETTransistor

DESCRIPTION ·siliconGateforfastswitchingatelevate ·rugged ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·suitedforapplicationssuchas Switchingpowersupplies,motorcontrols,inverters, Choppers,audioampl

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFI360

TRANSISTORN-CHANNEL(Vdss=400V,Rds(on)=0.20ohm,Id=25A)

HEXFETTRANSISTOR REPETITIVEAVALANCHERATEDANDdv/dtRATED 400Volt,0.20OhmHEXFET

IRF

International Rectifier

IRFI360

SimpleDriveRequirements

IRF

International Rectifier

IRFM360

400V,N-CHANNELHEXFETMOSFETTECHNOLOGY

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establishedadvantagesofMOSFETs,s

IRF

International Rectifier

IRFM360

SimpleDriveRequirements

IRF

International Rectifier

IRFM360

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP360

23A,400V,0.200Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFP360

PowerMOSFET(Vdss=400V,Rds(on)=0.20ohm,Id=23A)

IRF

International Rectifier

IRFP360

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360

MegaMOSFET

Features ?Fastswitchingtimes ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutingdv/dtrating Applications ?DCchoppers ?MotorControls ?Switch-modeandresonant-mode ?Uninterruptablepowersupplies(UPS) Adva

IXYS

IXYS Corporation

IRFP360

iscN-ChannelMOSFETTransistor

FEATURES ?DrainCurrent–ID=23A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ?FastSwitching DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP360

Avalanche-Energy-RatedN-ChannelPowerMOSFETs

TheIRFP360andIRFP362areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperationThesearen-channelenhancement-modesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingre

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP360

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360

PowerMOSFET

FEATURES ?DynamicdV/dtrated ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360LC

PowerMOSFET(Vdss=400V,Rds(on)=0.20ohm,Id=23A)

Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRF

International Rectifier

IRFP360LC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IN360AF

  • 制造商：

    Hubbell Wiring Device-Kellems

  • 功能描述：

    PS, IEC, REPL, INTERIOR, 3W, 60A

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
INITIO
23+
NA/
3824
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
 詢價(jià)
QFN
5000
詢價(jià)
TRACO
23+
原廠封裝
9888
專做原裝正品,假一罰百!
 詢價(jià)
CINCON
2020+
DIP-12
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
UNIVERSAL
23+
模塊
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
UNIVERSAL
9803+
模塊
11
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
UNIVERSAL
23+
原裝正品現(xiàn)貨
10000
模塊
 詢價(jià)
模塊
22+
ARTESYN
32350
原裝正品 假一罰十 公司現(xiàn)貨
 詢價(jià)
模塊
23+
ARTESYN
12800
##公司主營品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價(jià)
INCOMM
2016+
QFN
6523
只做進(jìn)口原裝現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
更多IN360AF供應(yīng)商 更新時(shí)間2024-10-25 14:43:00

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