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IMDQ65R007M2H中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書

IMDQ65R007M2H
廠商型號(hào)

IMDQ65R007M2H

功能描述

CoolSiC? MOSFET 650 V G2

絲印標(biāo)識(shí)

65R007M2

封裝外殼

PG-HDSOP-22

文件大小

1.22891 Mbytes

頁(yè)面數(shù)量

18 頁(yè)

生產(chǎn)廠商 Infineon Technologies AG
企業(yè)簡(jiǎn)稱

Infineon英飛凌

中文名稱

英飛凌科技股份公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-19 23:00:00

IMDQ65R007M2H規(guī)格書詳情

Features

? Ultra?low switching losses

? Benchmark gate threshold voltage, VGS(th) = 4.5 V

? Robust against parasitic turn?on even with 0 V turn?off gate voltage

? Flexible driving voltage and compatible with bipolar driving scheme

? Robust body diode operation under hard commutation events

? .XT interconnection technology for best?in?class thermal performance

Benefits

? Enables high efficiency and high power density designs

? Facilitates great ease of use and integration

?Provides the best price performance ratio compared to Industry’s most

ambitious roadmaps

? Reduces the size, weight and bill of materials of the systems

? Enhances system robustness and reliability

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