首頁 >IKD03N60RFA>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IKD03N60RFA | Optimized Eon, Eoff and Qrr for low switching losses | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | |
LightMOSPowerTransistor LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LightMOSPowerTransistor LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LightMOSPowerTransistor LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
LightMOSPowerTransistor LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
600VSuperJunctionPowerMOSFET | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 | CITC | ||
N-ChannelPowerMOSFET600V,3.3 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. ABSOLUTEMAXIMUMRATINGS(Ta=25℃) | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelPowerMOSFET600V,3.6 | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號:
IKD03N60RFA
- 制造商:
Infineon Technologies AG
- 功能描述:
IGBT PRODUCTS - Tape and Reel
- 功能描述:
IGBT w/ INTG DIODE 600V 5A
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價 | |||
INFINEON |
23+ |
7000 |
詢價 | ||||
INFINEON |
23+ |
TO-252 |
8000 |
原裝正品,假一罰十 |
詢價 | ||
Infineon Technologies |
21+ |
PG-TO252-3 |
2500 |
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)! |
詢價 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信,了解更多詳細(xì)信息,體驗一站式購物 |
詢價 | ||
Infineon(英飛凌) |
2112+ |
TO-252-2(DPAK) |
105000 |
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價 | ||
INFINEON |
1809+ |
TO252-3 |
3675 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Infineon/英飛凌 |
21+ |
TO-252-2(DPAK) |
6000 |
原裝現(xiàn)貨正品 |
詢價 | ||
Infineon/英飛凌 |
21+ |
TO-252-2(DPAK) |
10000 |
原裝,品質(zhì)保證,請來電咨詢 |
詢價 | ||
Infineon |
22+ |
NA |
493 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價 |
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