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IKD03N60RFA

Optimized Eon, Eoff and Qrr for low switching losses

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILA03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILB03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILD03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ILP03N60

LightMOSPowerTransistor

LightMOSPowerTransistor ?NewhighvoltagetechnologydesignedforZVS-switchinginlamp ballasts ?IGBTwithintegratedreversediode ?4Acurrentratingforreversediode ?Upto10timeslowergatecapacitancethanMOSFET ?Avalancherated ?150°Coperatingtemperature ?FullPakis

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

MJU03N60CT

600VSuperJunctionPowerMOSFET

CITCChip Integration Technology Corporation

竹懋科技竹懋科技股份有限公司

NDD03N60Z

N-ChannelPowerMOSFET600V,3.3

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDD03N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.6A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. ABSOLUTEMAXIMUMRATINGS(Ta=25℃)

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NDD03N60Z

N-ChannelPowerMOSFET600V,3.6

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDF03N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3.1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號:

    IKD03N60RFA

  • 制造商:

    Infineon Technologies AG

  • 功能描述:

    IGBT PRODUCTS - Tape and Reel

  • 功能描述:

    IGBT w/ INTG DIODE 600V 5A

供應(yīng)商型號品牌批號封裝庫存備注價格
INFINEON
23+
8000
只做原裝現(xiàn)貨
詢價
INFINEON
23+
7000
詢價
INFINEON
23+
TO-252
8000
原裝正品,假一罰十
詢價
Infineon Technologies
21+
PG-TO252-3
2500
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營)!
詢價
Infineon
1931+
N/A
493
加我qq或微信,了解更多詳細(xì)信息,體驗一站式購物
詢價
Infineon(英飛凌)
2112+
TO-252-2(DPAK)
105000
2500個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
詢價
INFINEON
1809+
TO252-3
3675
就找我吧!--邀您體驗愉快問購元件!
詢價
Infineon/英飛凌
21+
TO-252-2(DPAK)
6000
原裝現(xiàn)貨正品
詢價
Infineon/英飛凌
21+
TO-252-2(DPAK)
10000
原裝,品質(zhì)保證,請來電咨詢
詢價
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細(xì)信息,
詢價
更多IKD03N60RFA供應(yīng)商 更新時間2025-1-30 15:00:00