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IF850

850MHz MicroSphere Antenna

LSTD

Laird Tech Smart Technology

IF850-SF00

850MHz MicroSphere Antenna

LSTD

Laird Tech Smart Technology

IRF850

NCHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWICHING ■SWITCHMODEPOWERSUPPLIES(SMPS) ■CHOPPERREGULATORS,CONVERTERS,MOTORCONTROL,LIGHTINGFORINDUSTRIALANDCONSUMERENVIRONMENT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

IRF850

4.5A,500V,1.500Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF850

PowerFieldEffectTransistor

TMOSPOWERFET4.5AMPERES500VOLTSRDS(on)=1.5? ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn–Loss

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

IRF850

PowerMOStransistorAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. FEATURES ?Repe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF850

N-ChannelPowerMOSFETs,4.5A,450V/500V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspaedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VGSRatedat±20V ?SiliconGateforFastSwitchi

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF850

N-channelmosfettransistor

Features ?WithTO-220package ?Simpledriverequirements ?Fastswitching ?VDSS=500V;RDS(ON)≤1.5Ω;ID=4.5A ?1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF850

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconv

A-POWERAdvanced Power Electronics Corp.

富鼎先進(jìn)電子富鼎先進(jìn)電子股份有限公司

IVURDM-QD-850

iVuMachine-MountableRemoteDisplay

BANNERBanner Engineering Corp.

邦納電子邦納電子（蘇州）有限公司

IVURDM-QD-850RA

iVuMachine-MountableRemoteDisplay

BANNERBanner Engineering Corp.

邦納電子邦納電子（蘇州）有限公司

J850

Monostable

CIT

CIT Relay & Switch

J850SM

Monostable

CIT

CIT Relay & Switch

JK-MSMD850L

LowResistanceResettableFusePTCSMD1812Series

HUAXINANHuaXinAn Electronics CO.,LTD

華興安深圳市華興安電子有限公司

JPSU-850W-AC-AFI

QFX5120ETHERNETSWITCH

JUNIPERJuniper Networks, Inc.

瞻博網(wǎng)絡(luò)

JPSU-850W-AC-AFO

QFX5120ETHERNETSWITCH

JUNIPERJuniper Networks, Inc.

瞻博網(wǎng)絡(luò)

JPSU-850W-DC-AFI

QFX5120ETHERNETSWITCH

JUNIPERJuniper Networks, Inc.

瞻博網(wǎng)絡(luò)

JPSU-850W-DC-AFO

QFX5120ETHERNETSWITCH

JUNIPERJuniper Networks, Inc.

瞻博網(wǎng)絡(luò)

JTOS-850VW

VoltageControlledOscillator

MINI

Mini-Circuits

K850

N-CHANNEL30V-0.0024廓-30A-PolarPAK-TMSTripFET??PowerMOSFET

Description ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,moreoverthedoublesidescoolingpackagewithultralowjunctiontocasethermal

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán)

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SOT23-6
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IOR
2020+
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210000
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IOR
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ITON
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OFP48
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