1 Description

ThinQ!? Generation 5 represents Infineon leading edge technology for the SiC

Schottky Barrier diodes. Thanks to the more compact design and thin-wafer

technology, the new family of products shows improved efficiency over all load

conditions, resulting from both the improved thermal characteristics and a lower

figure of merit (Qc x Vf).

The new thinQ!? Generation 5 has been designed to complement our 650V

CoolMOS? families: this ensures meeting the most stringent application

requirements in this voltage range.

Features

? Revolutionary semiconductor material - Silicon Carbide

? Benchmark switching behavior

? No reverse recovery/ No forward recovery

? Temperature independent switching behavior

? High surge current capability

? Pb-free lead plating; RoHS compliant

? Qualified according to JEDEC1) for target applications

? Breakdown voltage tested at 44 mA2)

? Optimized for high temperature operation

Benefits

? System efficiency improvement over Si diodes

? System cost / size savings due to reduced cooling requirements

? Enabling higher frequency / increased power density solutions

? Higher system reliability due to lower operating temperatures

? Reduced EMI

IDW20G65C5屬于分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單。英飛凌科技股份公司制造生產(chǎn)的IDW20G65C5二極管 - 整流器 - 單單整流器二極管系列產(chǎn)品可用于讓電流僅沿一個(gè)方向流動(dòng)，并且每個(gè)器件封裝都恰好實(shí)現(xiàn)該功能的一個(gè)實(shí)例。其他用途的二極管（包括齊納二極管和可變電容二極管）單獨(dú)列在各自的產(chǎn)品系列中，每個(gè)器件封裝中包含多個(gè)二極管的產(chǎn)品也是如此。