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IDT7164L20Y

CMOS STATIC RAM 64K (8K x 8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20Y

包裝:管件 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 64KBIT PARALLEL 28SOJ

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT7164L20YB

CMOS STATIC RAM 64K (8K x 8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20YI

包裝:管件 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 64KBIT PARALLEL 28SOJ

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT7164L20YI8

包裝:管件 封裝/外殼:28-BSOJ(0.300",7.62mm 寬) 類別:集成電路(IC) 存儲(chǔ)器 描述:IC SRAM 64KBIT PARALLEL 28SOJ

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164L20DB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164L20DGI

CMOSStaticRAM64K

IDT

Integrated Device Technology, Inc.

7164L20TDB

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164L20TDGI

CMOSStaticRAM64K

IDT

Integrated Device Technology, Inc.

7164L20TPGI

CMOSStaticRAM64K

IDT

Integrated Device Technology, Inc.

7164L20YG

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

7164L20YGI

CMOSStaticRAM64K

IDT

Integrated Device Technology, Inc.

7164L20YGI

CMOSStaticRAM64K(8Kx8-Bit)

Features ◆High-speedaddress/chipselectaccesstime –Commercial:20/25ns(max.) –Industrial:20/25ns(max.) –Military:20/25/35/45/55/70/85/100ns(max.) ◆Lowpowerconsumption ◆Batterybackupoperation–2Vdataretentionvoltage (LVersiononly) ◆ProducedwithadvancedCMOShigh-p

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT7164L20D

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20DB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20P

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20PB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20TD

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20TDB

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

IDT7164L20TP

CMOSSTATICRAM64K(8Kx8-BIT)

Description TheIDT7164isa65,536bithigh-speedstaticRAMorganizedas8Kx8.ItisfabricatedusingIDT’shigh-performance,high-reliabilityCMOStechnology. Addressaccesstimesasfastas15nsareavailableandthecircuitoffersareducedpowerstandbymode.WhenCS1goesHIGHorCS

IDT

Integrated Device Technology, Inc.

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IDT7164L20Y

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 存儲(chǔ)器

  • 包裝:

    管件

  • 存儲(chǔ)器類型:

    易失

  • 存儲(chǔ)器格式:

    SRAM

  • 技術(shù):

    SRAM - 異步

  • 存儲(chǔ)容量:

    64Kb(8K x 8)

  • 存儲(chǔ)器接口:

    并聯(lián)

  • 寫周期時(shí)間 - 字,頁:

    20ns

  • 電壓 - 供電:

    4.5V ~ 5.5V

  • 工作溫度:

    0°C ~ 70°C(TA)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    28-BSOJ(0.300",7.62mm 寬)

  • 供應(yīng)商器件封裝:

    28-SOJ

  • 描述:

    IC SRAM 64KBIT PARALLEL 28SOJ

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IDT
23+
28SOJ300MIL
9526
詢價(jià)
IDT
23+
28-SOJ
73390
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IDT
05+
原廠原裝
4322
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
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IDT
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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IDT
23+
原廠封裝
9888
專做原裝正品,假一罰百!
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IDT
1822+
SOJ28
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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IDT, Integrated Device Technol
21+
28-SOJ
56200
一級代理/放心采購
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IDT
24+
28SOJ
7642
原裝現(xiàn)貨
詢價(jià)
IDT
20+
SOP-28
1001
就找我吧!--邀您體驗(yàn)愉快問購元件!
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IDT
23+
SOJ28
50000
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更多IDT7164L20Y供應(yīng)商 更新時(shí)間2024-10-28 15:02:00