首頁(yè)>IDT6167LA85YB>規(guī)格書(shū)詳情

IDT6167LA85YB中文資料IDT數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IDT6167LA85YB
廠商型號(hào)

IDT6167LA85YB

功能描述

CMOS STATIC RAM 16K (16K x 1-BIT)

文件大小

63.42 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Integrated Device Technology, Inc.
企業(yè)簡(jiǎn)稱(chēng)

IDT

中文名稱(chēng)

Integrated Device Technology, Inc.官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-28 17:09:00

IDT6167LA85YB規(guī)格書(shū)詳情

DESCRIPTION:

The lDT6167 is a 16,384-bit high-speed static RAM organized as 16K x 1. The part is fabricated using IDT’s highperformance, high reliability CMOS technology.

Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby mode as long as CS remains HIGH. This capability provides significant system-level power and cooling savings. The lowpower (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW operating off a 2V battery.

FEATURES:

? High-speed (equal access and cycle time)

— Military: 15/20/25/35/45/55/70/85/100ns (max.)

— Commercial: 15/20/25/35ns (max.)

? Low power consumption

? Battery backup operation — 2V data retention voltage (IDT6167LA only)

? Available in 20-pin CERDIP and Plastic DIP, and 20-pin SOJ

? Produced with advanced CMOS high-performance technology

? CMOS process virtually eliminates alpha particle softerror rates

? Separate data input and output

? Military product compliant to MIL-STD-883, Class B

產(chǎn)品屬性

  • 型號(hào):

    IDT6167LA85YB

  • 制造商:

    IDT

  • 制造商全稱(chēng):

    Integrated Device Technology

  • 功能描述:

    CMOS STATIC RAM 16K(16K x 1-BIT)

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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