首頁 >ICS9214YGLF-T>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
ICS9214YGLF-T | Rambus XDR Clock Generator GeneralDescription TheICS9214clockgeneratorprovidesthenecessaryclocksignalstosupporttheRambusXDRTMmemorysubsystemandRedwoodlogicinterface.Theclocksourceisareferenceclockthatmayormaynotbemodulatedforspreadspectrum.TheICS9214provides4differentialclockpair | ICSTChina Resources Microelectronics Limited Limited 華潤微電子華潤微電子有限公司 | ICST | |
ICS9214YGLF-T | RambusTM XDRTM Clock Generator | ICSI Integrated Circuit Solution Inc | ICSI | |
PowerMOSFET(Vdss=-250V,Rds(on)=3.0ohm,Id=-2.7A) | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET FEATURES ?Advancedprocesstechnology ?Fullyavalancherated ?Surface-mount(IRFR9214,SiHFR9214) ?Straightlead(IRFU9214,SiHFU9214) ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerat | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HEXFETPOWERMOSFET(VDSS=-250V,RDS(on)=3.0廓,ID=-2.7A) Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthede | IRF International Rectifier | IRF | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=-250V,Rds(on)=3.0ohm,Id=-2.7A) | IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=-250V,Rds(on)=3.0ohm,Id=-2.7A) | IRF International Rectifier | IRF |
詳細參數
- 型號:
ICS9214YGLF-T
- 制造商:
ICS
- 制造商全稱:
ICS
- 功能描述:
Rambus XDR Clock Generator
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ICST |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
ICS |
23+ |
SOP-28 |
1120 |
優(yōu)勢庫存 |
詢價 | ||
ICS |
2339+ |
SSOP-28 |
5825 |
公司原廠原裝現貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
ICS |
24+ |
SSOP-28 |
5000 |
只做原裝公司現貨 |
詢價 | ||
ICS |
24+ |
SSOP |
2987 |
只售原裝自家現貨!誠信經營!歡迎來電! |
詢價 | ||
ICS |
20+ |
SSOP-28 |
2960 |
誠信交易大量庫存現貨 |
詢價 | ||
ICS |
21+ |
SSOP-28 |
10000 |
原裝現貨假一罰十 |
詢價 | ||
ICS |
SSOP-28 |
68900 |
原包原標簽100%進口原裝常備現貨! |
詢價 | |||
ICS |
24+ |
TSSOP |
55 |
詢價 | |||
ICS |
23+ |
TSSOP28 |
5000 |
原裝正品,假一罰十 |
詢價 |
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