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HY57V658020BTC-10

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導體

HY57V658020BTC-10P

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導體

HY57V658020BTC-10S

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導體

HY57V658020BTC-75

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導體

HY57V658020BTC-8

4 Banks x 2M x 8Bit Synchronous DRAM

DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導體

HY57V658020

8Mx8bitSynchronousDRAMSeries

DESCRIPTION TheHY57V648010,HY57V648020,HY57V658010,HY57V658020,HY57V648011,HY57V648021,HY57V658011,HY57V658021arehighspeed3.3VSynchronousDRAMsandfabricatedwiththeHyundaiCMOSprocess.Eachbanksharesthesamechipinputsandoutputsbutcanbeindependentlyoperated.TheSynch

HynixHynix Semiconductor

海力士海力士半導體

HY57V658020B

4Banksx2Mx8BitSynchronousDRAM

DESCRIPTION TheHynixHY57V658020Bisa67,108,864-bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V658020Bisorganizedas4banksof2,097,152x8. HY57V658020Bisofferingfullysynchronousoperationrefere

HynixHynix Semiconductor

海力士海力士半導體

詳細參數(shù)

  • 型號：

    HY57V658020BTC

  • 制造商：

    HYNIX

  • 制造商全稱：

    Hynix Semiconductor

  • 功能描述：

    4 Banks x 2M x 8Bit Synchronous DRAM

供應商型號品牌批號封裝庫存備注價格
HY
20+
TSOP
2860
原廠原裝正品價格優(yōu)惠公司現(xiàn)貨歡迎查詢
 詢價
HY
24+
TSOP
960
詢價
HY
23+
TSOP
8890
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
HY
22+23+
TSOP
36981
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
HYNIX
23+
65480
詢價
HY
2023+
TSOP
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
HY
21+
TSOP
10000
原裝現(xiàn)貨假一罰十
 詢價
HY
23+
TSOP
5000
專注配單,只做原裝進口現(xiàn)貨
 詢價
HY
23+
TSOP
5000
專注配單,只做原裝進口現(xiàn)貨
 詢價
ALI
23+
QFP
6500
全新原裝假一賠十
 詢價
更多HY57V658020BTC供應商 更新時間2025-2-21 15:42:00

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