| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.0265? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableopera | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Itisintendedforgeneralpurposeswitchingapplications ?FEATURES ?Lowdrain-sourceon-resistance: RDS(on)≤44m?(max) ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoper | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ToshibaIK-540ACamera Forhigh-resolutionimaginginchallenginglightingconditions,thereisonlyonechoice:TheToshibaIK-540A. Thisamazingcameradeliverstheabsolutebestimagingperformanceinlowlight.Howgood?ItisdocumentedtobeuptoTENTIMESaspowerfulinlowlightthanconventionalmonochromeca | TOSHIBAToshiba Semiconductor 東芝株式會社東芝 | TOSHIBA | ||
CrystalClockOscillatorSpecification | IQD IQD Frequency Products Ltd | IQD | ||
CrystalClockOscillatorSpecification | IQD IQD Frequency Products Ltd | IQD | ||
PowerMOSFET(Vdss=100V,Rds(on)=0.077ohm,Id=28A) Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077Ohm | IRF International Rectifier | IRF | ||
HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.077廓,ID=28A) Continuousdraincurrent28A@Tc=25degC,Vgs=10V.Drain-to-sourcebreakdownvoltage100V.Drain-to-sourceon-resistance0.077OhmLead-Free | IRF International Rectifier | IRF | ||
N-ChannelPowerMOSFETs,27A,60-100V
| FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-channelTrenchMOStransistor VDSS=100V ID=23A RDS(ON)≤77m? GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.t | PhilipsNXP Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
N-CHANNEL100V-00.50ohm-30A-TO-220/TO-220FIPOWERMOSFET N-CHANNEL100V-00.50?-30A-TO-220/TO-220FIPOWERMOSFET ■TYPICALRDS(on)=0.050? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZA | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán) | STMICROELECTRONICS | ||
HEXFETPOWERMOSFET ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. 1.Dynamicdv/dtRating 2.RepetitiveAvalancheRated 3.175°COperatingTemperature | IRF International Rectifier | IRF | ||
N-CHANNEL100V-0.055廓-22ATO-220LOWGATECHARGESTripFET??IIPOWERMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體（ST）集團(tuán) | STMICROELECTRONICS | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-ChannelPowerMOSFET ID(A)28 VDSS(V)100 RDS(ON)(Ω)0.077@VGS=10V QG(nC)max.72 DESCRIPTION TheNellIRF540areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofop | NELLSEMINell Semiconductor Co., Ltd 尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司 | NELLSEMI | ||
N-ChannelPowerMOSFETs,27A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ● | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
- 性質(zhì)：
射頻/高頻放大 （HF）_寬頻帶放大 （A）
- 封裝形式：
直插封裝
- 極限工作電壓：
160V
- 最大電流允許值：
0.6A
- 最大工作頻率：
<1MHZ或未知
- 引腳數(shù)：
3
- 可代換的型號：
- 最大耗散功率：
0.625W
- 放大倍數(shù)：
- 圖片代號：
A-11
- vtest：
160
- htest：
999900
- atest：
0.6
- wtest：
0.625
詳細(xì)參數(shù)
- 型號：
HY540
- 制造商：
Vishay Sprague
- 功能描述：
CAPACITOR, CERAMIC DISC, 25 V, Y5S, 0.068 UF, THROUGH HOLE MOUNT
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FTC |
21+ |
SOP16 |
23000 |
只做正品原裝現(xiàn)貨 |
詢價 | ||
24+ |
N/A |
75000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
HYNIX/海力士 |
23+ |
FBGA |
10000 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
HY |
1903+ |
SSOP |
21500 |
HY專營!正規(guī)代理,錯過是損失! |
詢價 | ||
OTHER/其它 |
21+ |
原廠原封 |
5000 |
全新原裝 現(xiàn)貨 價優(yōu) |
詢價 | ||
華羿微 |
23+ |
TO-247 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
HOOYI |
2022+ |
TO-247 |
50000 |
原廠代理 終端免費提供樣品 |
詢價 | ||
華裔 |
21+ |
TO-247-3L |
7540 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價 | ||
HY |
TO-247 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
華羿微 |
22+ |
TO-247 |
50000 |
只做原裝假一罰十,歡迎咨詢 |
詢價 |
