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HY29LV400BT70

4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

HY29LV400BT70I

4 Mbit (512K x 8/256K x 16) Low Voltage Flash Memory

HynixHynix Semiconductor

海力士海力士半導(dǎo)體

AM29LV400BT70

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

spansionSPANSION

飛索飛索半導(dǎo)體

AM29LV400BT70REC

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM29LV400BT70RECB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM29LV400BT70REE

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM29LV400BT70REEB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM29LV400BT70REI

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM29LV400BT70REIB

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

AM29LV400BT70RFC

4Megabit(512Kx8-Bit/256Kx16-Bit)CMOS3.0Volt-onlyBootSectorFlashMemory

GENERALDESCRIPTION TheAm29LV400Bisa4Mbit,3.0volt-onlyFlashmemoryorganizedas524,288bytesor262,144words. DISTINCTIVECHARACTERISTICS ■Singlepowersupplyoperation —Fullvoltagerange:2.7to3.6voltreadandwrite operationsforbattery-poweredapplications

AMDAdvanced Micro Devices

超威半導(dǎo)體美國(guó)超威半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    HY29LV400BT70

  • 制造商：

    HYNIX

  • 制造商全稱(chēng)：

    Hynix Semiconductor

  • 功能描述：

    4 Mbit(512K x 8/256K x 16) Low Voltage Flash Memory

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
HY
TSOP48
15
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢(xún)價(jià)
HY
17+
TSOP48
9988
只做原裝進(jìn)口,自己庫(kù)存
 詢(xún)價(jià)
HYNIX
2025+
TSSOP
3827
全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷(xiāo)售
 詢(xún)價(jià)
HYNIX/海力士
23+
TSOP
3900
一級(jí)代理原廠VIP渠道,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、
 詢(xún)價(jià)
HY
24+
TSOP48
11520
詢(xún)價(jià)
HY
23+
TSOP48
8890
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶(hù)至上/歡迎廣大客戶(hù)來(lái)電查詢(xún)
 詢(xún)價(jià)
HY
02+
TSOP/48
11520
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢(xún)
 詢(xún)價(jià)
HYNIX
19+
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢(xún)價(jià)
02+
2020+
HY
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
 詢(xún)價(jià)
HYNIX
23+
TSOP48
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
更多HY29LV400BT70供應(yīng)商 更新時(shí)間2025-3-4 14:00:00

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