首頁>HY27UF081G2M-TPIP>規(guī)格書詳情
HY27UF081G2M-TPIP中文資料海力士數(shù)據(jù)手冊PDF規(guī)格書
相關芯片規(guī)格書
更多- HY27UF081G2M
- HY27UF081G2M-TPIB
- HY27UF081G2M-TMS
- HY27UF081G2M-TCB
- HY27UF081G2M-TEB
- HY27UF081G2M-TPCP
- HY27UF081G2M-T
- HY27UF081G2M-TPEP
- HY27UF081G2M-TPCS
- HY27UF081G2M-TES
- HY27UF081G2M-TCS
- HY27UF081G2M-TIS
- HY27UF081G2M-TCP
- HY27UF081G2M-F
- HY27UF081G2M-TPEB
- HY27UF081G2M-TMB
- HY27UF081G2M-TPES
- HY27UF081G2M-TEP
HY27UF081G2M-TPIP規(guī)格書詳情
SUMMARY DESCRIPTION
The HYNIX HY27(U/S)F(08/16)1G2M series isa 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 1.8V Vcc Power Supply and in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.
產(chǎn)品屬性
- 型號:
HY27UF081G2M-TPIP
- 制造商:
HYNIX
- 制造商全稱:
Hynix Semiconductor
- 功能描述:
1Gbit(128Mx8bit/64Mx16bit) NAND Flash Memory
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
HUNIX |
2016+ |
TSOP |
9000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
HY |
24+ |
TSOP |
13718 |
只做原裝 公司現(xiàn)貨庫存 |
詢價 | ||
HYHIX |
23+ |
TSOP48 |
5000 |
全新原裝假一賠十 |
詢價 | ||
Hynix |
24+ |
TSOP |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
HY |
25+ |
SSOP |
996880 |
只做原裝,歡迎來電資詢 |
詢價 | ||
HYNIX |
829+ |
TSOP48 |
196 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
SKHYNIX |
24+ |
TSOP48 |
3800 |
原裝現(xiàn)貨 |
詢價 | ||
Skhynix |
1844+ |
TSOP |
6528 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
SKhynix |
24+ |
TSOP48 |
90000 |
專營海力士內(nèi)存全線品牌假一賠萬原裝進口貨可開增值稅 |
詢價 | ||
HY |
17+ |
TSSOP4 |
9988 |
只做原裝進口,自己庫存 |
詢價 |