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HVR130

HIGH VOLTAGE RECTIFIER DIODES

FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Pb/RoHSFree

EIC

EIC discrete Semiconductors

HVR130

HIGH VOLTAGE RECTIFIER DIODES

FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Pb/RoHSFree

SYNSEMI

SynSemi,Inc.

HVR130

HIGH VOLTAGE

FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Pb/RoHSFree

EIC

EIC discrete Semiconductors

HW130

1/2WATTMETAL

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etc未分類制造商etc2未分類制造商

HW130

1/2WATTMETAL

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etc未分類制造商etc2未分類制造商

HW130

1/2WATTMETAL

NTE

NTE Electronics

IL130

AdmiralClass-LeadWires

ENSIGN

Ensign Corporation

IMB-130

Intel?Dual-CoreAtomTMCedarViewProcessorD2550/N2600/N2800

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IQXT-130

TCXOSpecification

IQD

IQD Frequency Products Ltd

IR130CSP

Flipky

IRF

International Rectifier

IRF130

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF130

N-ChannelPowerMOSFETs,20A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpower,supplies,UPS,ACandDCmotorcontrol,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF130

14A,100V,0.160Ohm,N-ChannelPowerMOSFET

14A,100V,0.160Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsar

Intersil

Intersil Corporation

IRF130

TRANSISTORSN-CHANNEL(Vdss=100V,Rds(on)=0.18ohm,Id=14A)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors. Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superior

IRF

International Rectifier

IRF130

N-CHANNELPOWERMOSFETS

FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導體

IRF130

HighPower,HighSpeedApplications

DESCRIPTION ?DrainCurrentID=14A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.18Ω(Max) ?HighPower,HighSpeedApplications APPLICATIONS ?Switchingpowersupplies ?UPS ?Motorcontrols ?Highenergypulsecircuits.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF130

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORS

Features: ?RepetitiveAvalancheRatings ?Dynamicdv/dtRating ?HermeticallySealed ?SimpleDriveRequirements ?EaseofParalleling

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

IRF130

SEMICONDUCTORS

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IRF130SMD

N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFE130

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

詳細參數(shù)

  • 型號:

    HVR130

  • 制造商:

    EIC

  • 制造商全稱:

    EIC discrete Semiconductors

  • 功能描述:

    HIGH VOLTAGE RECTIFIER DIODES

供應商型號品牌批號封裝庫存備注價格
EIC
23+
NA
39960
只做進口原裝,終端工廠免費送樣
詢價
RENESAS瑞薩/HITACHI日立
24+
SMD
9200
新進庫存/原裝
詢價
RENESAS
23+
SOD-123
6680
全新原裝優(yōu)勢
詢價
SOD-123
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
詢價
RENESAS
2020+
SOD-123
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
RENESAS
2023+
SOD-123
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
RENESAS/瑞薩
23+
SOD-123
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
RENESAS/瑞薩
21+
SOD-123
10000
原裝現(xiàn)貨假一罰十
詢價
RENESAS/瑞薩
23+
SOD-123
85
全新原裝正品現(xiàn)貨,支持訂貨
詢價
HITACHI
22+
SOD123
14169
進口原裝
詢價
更多HVR130供應商 更新時間2025-1-13 18:59:00