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I123

LeadedOscillator,TCXO,TCVCXOMetalPackage,FullSizeDIP

ProductFeatures: AvailableinBothClippedSinewaveand HCMOSOutputLevels CompatiblewithLeadfreeProcessing Applications: BaseStation IP WiMax/Wlan GeneralPurpose

ILSI

ILSI America LLC

IDTCV123

PROGRAMMABLEFLEXPCCLOCKFORP4PROCESSOR

DESCRIPTION: IDTCV123isa56pinclockdevice.TheCPUoutputbufferisdesignedtosupportupto400MHzprocessor.ThischiphasthreePLLsinsideforCPU/SRC/PCI,SATA,and48MHz/DOT96IOclocks.OnededicatedPLLforSerialATAclockprovideshighaccuracyfrequency.Thisdevicealsoimplemen

IDT

Integrated Device Technology, Inc.

IDTCV123

PROGRAMMABLEFLEXPC?CLOCKFORP4PROCESSOR

FEATURES: ?OnehighprecisionPLLforCPU,withSSCandNprogrammable ?OnehighprecisionPLLforSRC/PCI/SATA,SSCandNprogrammable ?OnehighprecisionPLLfor96MHz/48MHz ?Band-gapcircuitfordifferentialoutputs ?Supportsspreadspectrummodulation,downspread0.5 ?SupportsSMB

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDTCV123PV

PROGRAMMABLEFLEXPCCLOCKFORP4PROCESSOR

DESCRIPTION: IDTCV123isa56pinclockdevice.TheCPUoutputbufferisdesignedtosupportupto400MHzprocessor.ThischiphasthreePLLsinsideforCPU/SRC/PCI,SATA,and48MHz/DOT96IOclocks.OnededicatedPLLforSerialATAclockprovideshighaccuracyfrequency.Thisdevicealsoimplemen

IDT

Integrated Device Technology, Inc.

IDTCV123PV

PROGRAMMABLEFLEXPC?CLOCKFORP4PROCESSOR

FEATURES: ?OnehighprecisionPLLforCPU,withSSCandNprogrammable ?OnehighprecisionPLLforSRC/PCI/SATA,SSCandNprogrammable ?OnehighprecisionPLLfor96MHz/48MHz ?Band-gapcircuitfordifferentialoutputs ?Supportsspreadspectrummodulation,downspread0.5 ?SupportsSMB

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDTCV123PVG

PROGRAMMABLEFLEXPC?CLOCKFORP4PROCESSOR

FEATURES: ?OnehighprecisionPLLforCPU,withSSCandNprogrammable ?OnehighprecisionPLLforSRC/PCI/SATA,SSCandNprogrammable ?OnehighprecisionPLLfor96MHz/48MHz ?Band-gapcircuitfordifferentialoutputs ?Supportsspreadspectrummodulation,downspread0.5 ?SupportsSMB

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IP123

3AMPPOSITIVEVOLTAGEREGULATORS

FEATURES ?0.04/VLINEREGULATION ?0.3/ALOADREGULATION ?THERMALOVERLOADPROTECTION ?SHORTCIRCUITPROTECTION ?SAFEOPERATINGAREAPROTECTION ?1TOLERANCE ?START–UPWITHNEGATIVEVOLTAGE(±SUPPLIES)ONOUTPUT ?AVAILABLEIN5V,12VAND15VOPTIONS

SEME-LAB

Seme LAB

IP123A

3AMPPOSITIVEVOLTAGEREGULATORS

FEATURES ?0.04/VLINEREGULATION ?0.3/ALOADREGULATION ?THERMALOVERLOADPROTECTION ?SHORTCIRCUITPROTECTION ?SAFEOPERATINGAREAPROTECTION ?1TOLERANCE ?START–UPWITHNEGATIVEVOLTAGE(±SUPPLIES)ONOUTPUT ?AVAILABLEIN5V,12VAND15VOPTIONS

SEME-LAB

Seme LAB

IPM-C123

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪訊美國(guó)JDSU

IPM-L123

MiniatureIntegratedPowerMonitor

JDSUJDS Uniphase Corporation

捷迪訊美國(guó)JDSU

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF123

8.0Aand9.2A,80Vand100V,0.27and0.36Ohm,N-Channel,PowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF123

N-CHANNELPOWERMOSFETS

FEATURES ?LowRDs

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF123

NanosecondSwitchingSpeeds

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF123

IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF123

N-ChannelPowerMOSFETs,11A,60-100V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF123

N-ChannelPowerMosfets,

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IRFD123

1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs

Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul

HARRIS

Harris Corporation

IRFD123

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching, ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?ForAutomaticInsertion

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    HSM123-E

  • 制造商:

    Renesas Electronics Corporation

  • 功能描述:

    HSM123-E

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更多HSM123-E供應(yīng)商 更新時(shí)間2024-11-18 9:30:00