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HS-303BEH

Radiation Hardened CMOS Dual SPDT Analog Switch

Features ?QML,perMIL-PRF-38535 ?Radiationperformance ○Totaldose:3x105rad(Si) ○SEE:ForLET=60MeV?cm2/mgat60°incident angle,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HS-303BEH

Radiation Hardened CMOS Dual SPDT Analog Switch

Intersil

Intersil Corporation

HS-303BRH

RadiationHardenedCMOSDualSPDTAnalogSwitch

Features ?QML,perMIL-PRF-38535 ?Radiationperformance ○Totaldose:3x105rad(Si) ○SEE:ForLET=60MeV?cm2/mgat60°incident angle,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HS-303BRH

RadiationHardenedCMOSDualSPDTAnalogSwitch

Intersil

Intersil Corporation

HS-303CEH

RadiationHardenedBiCMOSDualSPDTAnalogSwitch

Features ?QML,perMIL-PRF-38535 ?Nolatch-up,dielectricallyisolateddeviceislands ?Pinoutandfunctionallycompatiblewiththe HS-303RHseriesofanalogswitches ?Analogsignalrangeequaltothesupplyvoltage range ?Lowleakage:150nA(max,post-rad) ?LowrON:60Ω(max,post-ra

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HS-303CEH

RadiationHardenedBiCMOSDualSPDTAnalogSwitch

TheHS-303CEHisananalogswitchandamonolithicdevicethatisfabricatedusingIntersil’sdielectricallyisolatedRadiationHardenedSiliconGate(RSG)processtechnologytoinsurelatch-upfreeoperation.ItispinoutcompatibleandfunctionallyequivalenttotheHS-303RH.Thisswitchoffers

Intersil

Intersil Corporation

HS-303RH

RadiationHardenedCMOSDualSPDTAnalogSwitch

TheHS-303RHanalogswitchisamonolithicdevicefabricatedusingRadiationHardenedCMOStechnologyandtheIntersildielectricisolationprocessforlatch-upfreeoperation.Improvedtotaldosehardnessisobtainedbylayout(thinoxidetabsextendingtoachannelstop)andprocessing(hardened

Intersil

Intersil Corporation

HS-303RH-T

RadiationHardenedCMOSDualSPDTAnalogSwitch

RadiationHardenedCMOSDualSPDTAnalogSwitch Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellite

Intersil

Intersil Corporation

HSFPAR303A

ForceSensorUNIT

ALPSALPS ELECTRIC CO.,LTD.

阿爾卑斯阿爾卑斯電氣株式會社

HSPA-303

HSUPAUSBDataModem

ADVANTECHAdvantech Co., Ltd.

研華科技研華科技（中國）有限公司

HWS303

GaAsDC-2.5GHzSPDTSwitch

PackageDescription TheHWS303isaGaAsMMICSPDTswitchinalowcostSOT-363plasticpackage.TheHWS303featureslowinsertionlosswithverylowDCpowerconsumption.Thisgeneralpurposeswitchcanbeusedinanaloganddigitalwirelesscommunicationsystems. Features ?LowInsertionLoss

HWHexawave, Inc

漢威光電股份有限公司

HZS303

SiliconEpitaxialPlanarZenerDiodeforStabilizedPowerSupply

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IHA-303

FilterInductors

VishayVishay Siliconix

威世科技威世科技半導體

INA303

OvercurrentProtection,High-SpeedPrecision,Current-SenseAmplifier

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

INA303

Automotive,36-V,OvercurrentProtection,Precision,Current-SenseAmplifiersWithDualIntegratedComparators

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

IS303

1Wepoxysealtype

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

ISCRU303D

UltrafastRectifier

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISM303DAC

High-performance,low-power,compact3Daccelerometerand3Dmagnetometermodule

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

ISM303DACTR

High-performance,low-power,compact3Daccelerometerand3Dmagnetometermodule

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體（ST）集團

KBP303

GLASSPASSIVATEDBRIDGERECTIFIERS

FEATURES ●Ratingto1000VPRV ●Idealforprintedcircuitboard ●Reliablelowcostconstructionutilizingmoldedplastictechnique ●TheplasticmaterialhasULflammabilityclassification94V-0 ●IncompliancewithEURoHS2002/95/ECdirectives

CTC

ctconline

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6878
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更多HS-303BEH供應商 更新時間2024-10-28 16:12:00

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