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HRH13N50ANX

500V N-Channel Planar MOSFET

Features RDSON=0.48Ω@Vgs=10V,Id=6.5A LowgateCharge(typical30.9nC) LowCrss(typical0.78pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower A

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH13N50BNB

500VN-ChannelPlanarMOSFET

Features RDSON=0.38Ω@Vgs=10V,Id=6.5A LowgateCharge(typical40.1nC) LowCrss(typical6.6pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH13N50BNF

500VN-ChannelPlanarMOSFET

Features RDSON=0.38Ω@Vgs=10V,Id=6.5A LowgateCharge(typical40.1nC) LowCrss(typical6.6pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH13N50BNP

500VN-ChannelPlanarMOSFET

Features RDSON=0.38Ω@Vgs=10V,Id=6.5A LowgateCharge(typical40.1nC) LowCrss(typical6.6pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH13N50BNV

500VN-ChannelPlanarMOSFET

Features RDSON=0.38Ω@Vgs=10V,Id=6.5A LowgateCharge(typical40.1nC) LowCrss(typical6.6pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH13N50BNW

500VN-ChannelPlanarMOSFET

Features RDSON=0.38Ω@Vgs=10V,Id=6.5A LowgateCharge(typical40.1nC) LowCrss(typical6.6pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HRH13N50BNX

500VN-ChannelPlanarMOSFET

Features RDSON=0.38Ω@Vgs=10V,Id=6.5A LowgateCharge(typical40.1nC) LowCrss(typical6.6pF) Fastswitchingcapability 100avalanchetested Improveddv/dtcapability HalogenfreeandRoHScompliant Applications SwitchModePowerSupply UninterruptiblePowerSupply(UPS) TVPower Ad

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

HY13N50FT

500V/13AN-ChannelEnhancementModeMOSFET

HY

HY ELECTRONIC CORP.

HY13N50T

500V/13AN-ChannelEnhancementModeMOSFET

HY

HY ELECTRONIC CORP.

IRF13N50

N-ChannelPowerMOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRFB13N50A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB13N50A

PowerMOSFET

FEATURES ?LowerGateChargeQgResultsinSimplerDrive Reqirements ?ImprovedGate,AvalancheandDynamicdV/dt Ruggedness ?FullyCharacterizedCapacitanceandAvalancheVoltage ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowerSupply(SMPS) ?UninterruptiblePowerSupp

KERSEMI

Kersemi Electronic Co., Ltd.

IRFB13N50A

PowerMOSFET(Vdss=500V,Rds(on)max=0.450ohm,Id=14A)

SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent Applications ●SwitchModePowerSupply(SMPS) ●UninterruptiblePowerSupply ●High

IRF

International Rectifier

IRFB13N50A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB13N50A

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB13N50APBF

SMPSMOSFET

SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent Applications ●SwitchModePowerSupply(SMPS) ●UninterruptiblePowerSupply ●High

IRF

International Rectifier

IRFB13N50APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFB13N50APBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IXFC13N50

HiPerFETMOSFETISOPLUS220

IXYS

IXYS Corporation

IXFC13N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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2023
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全新原裝 研究所指定供貨商
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microray
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更多HRH13N50ANX供應(yīng)商 更新時間2024-11-14 15:00:00