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I730

6A400VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導體江蘇東海半導體股份有限公司

IRC730

PowerMOSFET(Vdss=400V,Rds(on)=1.0ohm,Id=5.5A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRating ?RepetitiveAvalancheRated ?CurrentSense ?FastSwitching ?Ease

IRF

International Rectifier

IRF730

N-CHANNEL400V-0.75ohm-5.5A-TO-220PowerMESH]MOSFET

Description ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. Generalfeatures

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體(ST)集團

IRF730

PowerMOStransistorAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRF730issuppliedin

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF730

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF730

400VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF730

5.5A,400V,1.000Ohm,N-ChannelPowerMOSFET

ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistor.ItisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

IRF730

SMPSMOSFET

SMPSMOSFET Applications ●SwitchModePowerSupply(SMPS) ●UninterruptablePowerSupply ●Highspeedpowerswitching Benefits ●LowGateChargeQgresultsinSimple DriveRequirement ●ImprovedGate,Avalancheanddynamic dv/dtRuggedness ●FullyCharacterizedCapacitanceand

IRF

International Rectifier

IRF730

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp

SUNTAC

Suntac Electronic Corp.

IRF730

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap

DCCOM

Dc Components

IRF730

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導體

IRF730

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description APECMOSFETprovidethepowerdesignerwiththebestcombinationoffastswitching,loweron-resistanceandreasonablecost. TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-ACconvert

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

IRF730

N-channelmosfettransistor

Features ?WithTO-220package ?Simpledriverequirements ?Fastswitching ?VDSS=400V;RDS(ON)≤1.0Ω;ID=5.5A ?1.gate2.drain3.source

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF730

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

IRF730

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF730

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF730areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. FEATURES ●RDS(ON)=1.00?@VGS=10V ●Ultralowgatec

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

IRF730

6.0A400VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES ◆HigherCurrentRating ◆LowerrDS(ON),LowerCapacitances ◆LowerTotalGateCharge ◆TighterVSDSp

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF730

HighPowerFactor/LowTHD

IRF

International Rectifier

IRF730

6.0A,400V,1.0廓N-CHANNELPOWERMOSFET

DESCRIPTION ?IRF730is400VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ?Advancedterminationschemetoprovideenhancedvoltage-blockingcapability; ?AvalancheEnergySpecified; ?Source-to-DrainDiodeRecov

FS

First Silicon Co., Ltd

IRF730

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

供應商型號品牌批號封裝庫存備注價格
SEA&LAND/陸海
1950+
98552
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
詢價
SEA&LAND
2022+
3000
原廠代理 終端免費提供樣品
詢價
SEA&LAND
23+
6800
專注配單,只做原裝進口現(xiàn)貨
詢價
SEA&LAND
23+
6800
專注配單,只做原裝進口現(xiàn)貨
詢價
N/A
23+
10000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
CRM/華潤微
1年內(nèi)
TO-252
150000
類別: 300V~1369V N溝道MOS管
詢價
NEC
2022
BGA
20
原廠原裝正品,價格超越代理
詢價
NEC
24+
QFP
158
詢價
NEC
2023+環(huán)?,F(xiàn)貨
進口原裝,熱賣庫存
2500
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
詢價
NEC
2023+
BGA
50000
原裝現(xiàn)貨
詢價
更多HPD730供應商 更新時間2024-11-16 16:11:00