HMC409LP4ERF/IF射頻/中頻RFID的射頻放大器規(guī)格書PDF中文資料

HMC409LP4E屬于RF/IF射頻/中頻RFID的射頻放大器。由亞德諾半導(dǎo)體技術(shù)有限公司制造生產(chǎn)的HMC409LP4E射頻放大器在射頻應(yīng)用中，射頻放大器產(chǎn)品可用于信號增益和緩沖。這些產(chǎn)品與通用運算放大器的不同之處在于，它們通常適用于更高的頻率，更傾向于提供不可調(diào)節(jié)的固定增益，并且輸入或輸出阻抗值符合常用傳輸線特性阻抗。

General Description

The HmC409lp4e are high efficiency GaAs inGap HBT mmiC power amplifiers operating from 3.3 to 3.8 GHz. The amplifier is packaged in a low cost, leadless smT package. Utilizing a minimum of external components the amplifier provides 31 dB of gain and +32.5 dBm of saturated power from a +5V supply voltage. The power control (Vpd) can be used for full power down or rf output power/current control. for +22 dBm ofDm output power (64 QAm, 54 mbps), the HmC409lp4e achieve an error vector magnitude (eVm) of 2, meeting wimAX 802.16 linearity requirements.

Features

Gain: 31 dB

40 pAe @ +32.5 dBm pout

2 eVm @ pout = +22 dBm

with 54mbps ofDm signal

+46 dBm output ip3

integrated power Control (Vpd)

single +5V supply

Typical Applications

This amplifier is ideal for use as a power

amplifier for 3.3 - 3.8 GHz applications:

? wimAX 802.16

? fixed wireless Access

? wireless local loop