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HGT1S7N60A4DS中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

HGT1S7N60A4DS
廠商型號(hào)

HGT1S7N60A4DS

功能描述

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件大小

143.32 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡(jiǎn)稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-20 11:58:00

HGT1S7N60A4DS規(guī)格書詳情

The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Features

? >100kHz Operation At 390V, 7A

? 200kHz Operation At 390V, 5A

? 600V Switching SOA Capability

? Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at TJ = 125°C

? Low Conduction Loss

? Temperature Compensating SABER? Model www.fairchildsemi.com

產(chǎn)品屬性

  • 型號(hào):

    HGT1S7N60A4DS

  • 功能描述:

    IGBT 晶體管 600V N-Ch IGBT SMPS Series HF

  • RoHS:

  • 制造商:

    Fairchild Semiconductor

  • 配置:

    集電極—發(fā)射極最大電壓

  • VCEO:

    650 V

  • 集電極—射極飽和電壓:

    2.3 V

  • 柵極/發(fā)射極最大電壓:

    20 V 在25

  • C的連續(xù)集電極電流:

    150 A

  • 柵極—射極漏泄電流:

    400 nA

  • 功率耗散:

    187 W

  • 封裝/箱體:

    TO-247

  • 封裝:

    Tube

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