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HCS

High Current Metal Element Shunt Resistor

Features: ?Metalelementshuntresistor ?Availableinupto10Wpowerrating ?Resistancevaluefrom0.1to5mΩ ?Currenthandlingupto316Ain5930size ?Excellentlong-termstability ?AEC-Q200qualified ?100RoHScompliantandleadfreewithoutexemption ?Halogenfree ?REACHcom

SEIStackpole Electronics Inc.

斯塔克波爾斯塔克波爾電子公司

HCS00D

Radiation Hardened Quad 2-Input NAND Gate

Description TheIntersilHCS00MSisaRadiationHardenedQuad2-InputNANDGate.AhighonbothinputsforcestheoutputtoaLowstate. TheHCS00MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFa

Intersil

Intersil Corporation

HCS00D

Radiation Hardened Quad 2-Input NAND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Cos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCS00DMSR

Radiation Hardened Quad 2-Input NAND Gate

Description TheIntersilHCS00MSisaRadiationHardenedQuad2-InputNANDGate.AhighonbothinputsforcestheoutputtoaLowstate. TheHCS00MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFa

Intersil

Intersil Corporation

HCS00DMSR

Radiation Hardened Quad 2-Input NAND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Cos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCS00HMSR

Radiation Hardened Quad 2-Input NAND Gate

Description TheIntersilHCS00MSisaRadiationHardenedQuad2-InputNANDGate.AhighonbothinputsforcestheoutputtoaLowstate. TheHCS00MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFa

Intersil

Intersil Corporation

HCS00HMSR

Radiation Hardened Quad 2-Input NAND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Cos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCS00K

Radiation Hardened Quad 2-Input NAND Gate

Description TheIntersilHCS00MSisaRadiationHardenedQuad2-InputNANDGate.AhighonbothinputsforcestheoutputtoaLowstate. TheHCS00MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFa

Intersil

Intersil Corporation

HCS00K

Radiation Hardened Quad 2-Input NAND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Cos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCS00KMSR

Radiation Hardened Quad 2-Input NAND Gate

Description TheIntersilHCS00MSisaRadiationHardenedQuad2-InputNANDGate.AhighonbothinputsforcestheoutputtoaLowstate. TheHCS00MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFa

Intersil

Intersil Corporation

HCS00KMSR

Radiation Hardened Quad 2-Input NAND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Cos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCS00MS

Radiation Hardened Quad 2-Input NAND Gate

Description TheIntersilHCS00MSisaRadiationHardenedQuad2-InputNANDGate.AhighonbothinputsforcestheoutputtoaLowstate. TheHCS00MSutilizesadvancedCMOS/SOStechnologytoachievehigh-speedoperation.Thisdeviceisamemberofradiationhardened,high-speed,CMOS/SOSLogicFa

Intersil

Intersil Corporation

HCS00MS

Radiation Hardened Quad 2-Input NAND Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Cos

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCS02D

Radiation Hardened Quad 2-Input NOR Gate

Description TheIntersilHCS02MSisaRadiationHardenedQuad2-InputNOR Gate.AlowonbothinputsforcestheoutputtoaHighstate. TheHCS02MSutilizesadvancedCMOS/SOStechnologyto achievehigh-speedoperation.Thisdeviceisamemberof radiationhardened,high-speed,CMOS/SOSLogic

Intersil

Intersil Corporation

HCS02D

Radiation Hardened Quad 2-Input NOR Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012Rads(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Latc

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCS02DMSR

Radiation Hardened Quad 2-Input NOR Gate

Description TheIntersilHCS02MSisaRadiationHardenedQuad2-InputNOR Gate.AlowonbothinputsforcestheoutputtoaHighstate. TheHCS02MSutilizesadvancedCMOS/SOStechnologyto achievehigh-speedoperation.Thisdeviceisamemberof radiationhardened,high-speed,CMOS/SOSLogic

Intersil

Intersil Corporation

HCS02DMSR

Radiation Hardened Quad 2-Input NOR Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012Rads(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Latc

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCS02HMSR

Radiation Hardened Quad 2-Input NOR Gate

Description TheIntersilHCS02MSisaRadiationHardenedQuad2-InputNOR Gate.AlowonbothinputsforcestheoutputtoaHighstate. TheHCS02MSutilizesadvancedCMOS/SOStechnologyto achievehigh-speedoperation.Thisdeviceisamemberof radiationhardened,high-speed,CMOS/SOSLogic

Intersil

Intersil Corporation

HCS02HMSR

Radiation Hardened Quad 2-Input NOR Gate

Features ?3MicronRadiationHardenedSOSCMOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012Rads(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Latc

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HCS02K

Radiation Hardened Quad 2-Input NOR Gate

Description TheIntersilHCS02MSisaRadiationHardenedQuad2-InputNOR Gate.AlowonbothinputsforcestheoutputtoaHighstate. TheHCS02MSutilizesadvancedCMOS/SOStechnologyto achievehigh-speedoperation.Thisdeviceisamemberof radiationhardened,high-speed,CMOS/SOSLogic

Intersil

Intersil Corporation

詳細參數(shù)

  • 型號:

    HCS

  • 功能描述:

    汽車連接器 CONNECTOR-AUTOMOTIVE

  • RoHS:

  • 制造商:

    Amphenol SINE Systems

  • 產(chǎn)品:

    Contacts

  • 系列:

    ATP

  • 型式:

    Female

  • 觸點電鍍:

    Nickel

供應(yīng)商型號品牌批號封裝庫存備注價格
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2015+
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19889
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3200
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2022
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01+
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138
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1001
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22+23+
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30141
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更多HCS供應(yīng)商 更新時間2024-10-26 9:28:00