零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPSWITH3-STATEOUTPUTS | TI1Texas Instruments 德州儀器 | TI1 | ||
Octal3-StateNoninvertingDFlip-Flop | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
OCTALEDGE-TRIGGEREDD-TYPEFLIP-FLOPSWITH3-STATEOUTPUTS | TITexas Instruments 德州儀器美國(guó)德州儀器公司 | TI | ||
OctalD-typeflip-flop;positiveedge-trigger;3-state | nxpNXP Semiconductors 恩智浦恩智浦半導(dǎo)體公司 | nxp | ||
HIGH-SPEEDCOMSLOGICOCTALD-TYPEFLIP-FLOP3-STATE,POSITIVE-EDGERIGGERED | TITexas Instruments 德州儀器美國(guó)德州儀器公司 | TI | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Description TheIntersilHCTS574MSisaRadiationHardenednon-invertingoctalD-type,positiveedgetriggeredflip-flopwiththree-stateableoutputs.TheHCTS574MSutilizesadvancedCMOS/SOStechnology.Theeightflip-flopsenterdataintotheirregistersontheLOW-to-HIGHtransitionoftheclo | Intersil Intersil Corporation | Intersil | ||
RadiationHardenedOctalD-TypeFlip-Flop,Three-State,PositiveEdgeTriggered Features ?3MicronRadiationHardenedCMOSSOS ?TotalDose200KRAD(Si) ?SEPEffectiveLETNoUpsets:>100MEV-cm2/mg ?SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s ?DoseRateUpset>1010RAD(Si)/s20nsPulse ?Lat | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS |
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TI |
00/01+ |
TSSOP |
1904 |
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INtersil |
23+ |
SOP8 |
7220 |
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HARRIS |
24+ |
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3200 |
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5 |
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相關(guān)規(guī)格書
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- HC573
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- HC595A
相關(guān)庫(kù)存
更多- HBFP-0420-TR1
- HC02
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- HC123
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- HC138
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- HC1-5508
- HC1-55564-9
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