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HAL730SF-E

Hall-EffectSensorswithDirectionDetection

MICRONAS

Micronas

HAL730SF-K

Hall-EffectSensorswithDirectionDetection

MICRONAS

Micronas

HFP730

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription thesepowerMOSFETsisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers.AndDC-DC&DC-ACConvertersforTelecom,IndustrialandConsumerEnvironment Features ?5.5A,400V,RDS(on)

HuashanSHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

華汕電子器件汕頭華汕電子器件有限公司

HFP730

400VN-ChannelMOSFET

FEATURES ?OriginativeNewDesign ?SuperiorAvalancheRuggedTechnology ?RobustGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:18nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):0.8Ω(Typ.)@VGS=10V ?

SEMIHOW

SemiHow Co.,Ltd.

HFP730F

400VN-ChannelMOSFET

Features ?OriginativeNewDesign ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?100AvalancheTested ?RoHSCompliant

SEMIHOW

SemiHow Co.,Ltd.

HFP730S

SuperiorAvalancheRuggedTechnology

FEATURES ?OriginativeNewDesign ?SuperiorAvalancheRuggedTechnology ?RobustGateOxideTechnology ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?UnrivalledGateCharge:17nC(Typ.) ?ExtendedSafeOperatingArea ?LowerRDS(ON):0.75Ω(Typ.)@VGS=10V ?

SEMIHOW

SemiHow Co.,Ltd.

HFP730U

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HFS730

400VN-ChannelMOSFET

SEMIHOW

SemiHow Co.,Ltd.

HFS730F

400VN-ChannelMOSFET

Features ?OriginativeNewDesign ?VeryLowIntrinsicCapacitances ?ExcellentSwitchingCharacteristics ?100AvalancheTested ?RoHSCompliant

SEMIHOW

SemiHow Co.,Ltd.

HFS730S

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HFS730U

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HIRF730

N-CHANNELPOWERMOSFET

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

HIRF730F

N-CHANNELPOWERMOSFET

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

HM730

400VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM730F

400VN-ChannelMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

I730

6A400VN-channelEnhancementModePowerMOSFET

WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd

東海半導(dǎo)體江蘇東海半導(dǎo)體股份有限公司

IRC730

PowerMOSFET(Vdss=400V,Rds(on)=1.0ohm,Id=5.5A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?Dynamicdv/dtRating ?RepetitiveAvalancheRated ?CurrentSense ?FastSwitching ?Ease

IRF

International Rectifier

IRF730

N-CHANNEL400V-0.75ohm-5.5A-TO-220PowerMESH]MOSFET

Description ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. Generalfeatures

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

IRF730

PowerMOStransistorAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. TheIRF730issuppliedin

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF730

N-ChannelPowerMOSFETs,5.5A,350V/400V

Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. ?VQSRatedat±20V ?SiliconGateforFastSwitchingSp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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30216
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22+
SOT-89
20000
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MICRONE/微盟
22+
SOT-89
100000
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MICRON/美光
21+
SOT89
30000
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Micronas
1942+
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908
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MICRONAS
24+
SOT89
5000
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23+
SOT89
50000
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MICRONAS/微開
2022
SOT89
80000
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MICRONAS
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1000
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