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HAL300SO-E中文資料MICRONAS數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

HAL300SO-E
廠商型號(hào)

HAL300SO-E

功能描述

Differential Hall Effect Sensor IC

文件大小

140.29 Kbytes

頁(yè)面數(shù)量

17 頁(yè)

生產(chǎn)廠商 Micronas
企業(yè)簡(jiǎn)稱(chēng)

MICRONAS

中文名稱(chēng)

Micronas官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-1 23:00:00

HAL300SO-E規(guī)格書(shū)詳情

Introduction

The HAL300 is a differential Hall switch produced in CMOS technology. The sensor includes 2 temperature compensated Hall plates (2.05 mm apart) with active offset compensation, a differential amplifier with a Schmitt trigger, and an open-drain output transistor (see Fig. 2).

Features:

– distance between Hall plates: 2.05 mm

– operates from 4.5 V to 24 V supply voltage

– switching offset compensation at 62 kHz

– overvoltage protection

– reverse-voltage protection at VDD-pin

– short-circuit protected open-drain output by thermal shutdown

– operates with magnetic fields from DC to 10 kHz

– output turns low with magnetic south pole on branded side of package and with a higher magnetic flux density in sensitive area S1 as in S2

– on-chip temperature compensation circuitry minimizes shifts of the magnetic parameters over temperature and supply voltage range

– the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of hysteresis

– EMC corresponding to DIN 40839

產(chǎn)品屬性

  • 型號(hào):

    HAL300SO-E

  • 制造商:

    MICRONAS

  • 制造商全稱(chēng):

    MICRONAS

  • 功能描述:

    Differential Hall Effect Sensor IC

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2000
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