H5PS1G63EFR中文資料海力士數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Description

Device Features & Ordering Information

Key Features

? VDD = 1.8 +/- 0.1V

? VDDQ = 1.8 +/- 0.1V

? All inputs and outputs are compatible with SSTL_18 interface

? 8 banks

? Fully differential clock inputs (CK, /CK) operation

? Double data rate interface

? Source synchronous-data transaction aligned to bidirectional data strobe (DQS, DQS)

? Differential Data Strobe (DQS, DQS)

? Data outputs on DQS, DQSedges when read (edged DQ)

? Data inputs on DQS centers when write (centered DQ)

? On chip DLL align DQ, DQS and DQStransition with CK transition

? DM mask write data-in at the both rising and falling edges of the data strobe

? All addresses and control inputs except data, data strobes and data masks latched on the rising

edges of the clock

? Programmable CAS latency 3, 4, 5 and 6 supported

? Programmable additive latency 0, 1, 2, 3, 4 and 5 supported

? Programmable burst length 4/8 with bothnibble sequential and interleave mode

? Internal eight bank operations with single pulsed RAS

? Auto refresh and self refresh supported

? tRAS lockout supported

? 8K refresh cycles /64ms

? JEDEC standard 60ball FBGA(x4/x8), 84ball FBGA(x16)

? Full strength driver option controlled by EMR

? On Die Termination supported

? Off Chip Driver Impedance Adjustment supported

? Read Data Strobe supported (x8 only)

? Self-Refresh High Temperature Entry