H11F1TM中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

General Description

The H11FXM series consists of a Gallium-Aluminum Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages.

Features

As a remote variable resistor:

■≤100?to ≥300M?

■≥99.9 linearity

■≤15pF shunt capacitance

■≥100G?I/O isolation resistance

As an analog switch:

■Extremely low offset voltage

■60 Vpk-pksignal capability

■No charge injection or latch-up

■ton, toff≤15μS

■UL recognized (File #E90700)

Applications

As a remote variable resistor:

■Isolated variable attenuator

■Automatic gain control

■Active filter fine tuning/band switching As an analog switch:

■Isolated sample and hold circuit

■Multiplexed, optically isolated A/D conversion