GTVA212701FA-V2-R2分立半導體產品的晶體管-FETMOSFET-射頻規(guī)格書PDF中文資料

GTVA212701FA-V2-R2屬于分立半導體產品的晶體管-FETMOSFET-射頻。由WOLFSPEED, INC.制造生產的GTVA212701FA-V2-R2晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。

Description

The GTVA212701FA is a 270-watt GaN on SiC high electron

mobility transistor (HEMT) for use in the 2110 to 2200 MHz

frequecy band. It features input matching, high efficiency,

and a thermally-enhanced earless package.

Features

? GaN on SiC HEMT technology

? Input matched

? Typical pulsed CW performance (class AB),

2180 MHz, 48 V, 10 μs pulse width, 10 duty cycle

- Output power P3dB = 300 W

- Drain efficiency = 68.5

- Gain = 17.5 dB

? Human Body Model Class 1B (per ANSI/ESDA/

JEDEC JS-001)

? Capable of handling 10:1 VSWR @ 48 V, 56.2 W

(WCDMA) output power

? Low thermal resistance

? Pb-free and RoHS-compliant