GS120R033Q4A中文資料谷峰半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

Description

Silicon Carbide (SiC) MOSFET use a completely new

technology that provide superior switching performance and

higher reliability compared to Silicon. In addition, the low ON

resistance and compact chip size ensure low capacitance

and gate charge. Consequently, system benefits include

highest efficiency, faster operating frequency, increased

power density, reduced EMI, and reduced system size.

AEC-Q101 Qualified and PPAP Capable

Features

l VDS 1200V

l ID (at VGS = 20V) 69A

l RDS(ON) (at VGS = 20V) = 33mΩ

l High Blocking Voltage

l High Frequency Operation

l Low on-resistance

l Fast intrinsic diode with low reverse recovery

l 100% avalanche tested

Application

l Motor Drives

l Solar Inverters

l EV Charging Station

l AC/DC converters

l DC/DC converters

l Uninterruptable power supplies