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GRM188R60J106ME47

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA20312BVisa2--stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorr

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

GRM188R60J106ME47

Heterojunction Bipolar Transistor Technology (InGaP HBT)

HeterojunctionBipolarTransistorTechnology(InGaPHBT) HighEfficiency/LinearityAmplifier TheMMA20312Bisa2-stagehighefficiency,ClassABInGaPHBTamplifierdesignedforuseasalineardriveramplifierinwirelessbasestationapplicationsaswellasanoutputstageinfemtocellorrep

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

GRM188R60J106ME47

Ceramic Capacitors(SMD)

Specifications 180mmPaperTape 330mmPaperTape

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

GRM188R60J106ME47

AS1170 High current LED/VCSEL driver

Features Highefficiency4MHzfixedfrequencyDCDCBoostconverter Independentchannelcontrol PWMoperationforloweroutputcurrent WL-CSPpackage Automaticcurrentadjustmentforlowbatteryvoltage Highoutputcurrent Benefits Stableevenincoilcurrentlimit Combinechannelsfor

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

GRM188R60J106ME47

TPS63900 1.8-V to 5.5-V, 400-mA, 200-nA Quiescent Current Buck-Boost Converter

TI1Texas Instruments

德州儀器

GRM188R60J106ME47

High-performance class-G stereo headphone amplifier with I2C volume control

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

GRM188R60J106ME47

3 MHz, 2 A Synchronous Buck Converter

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

GRM188R60J106ME47

Chip Multilayer Ceramic Capacitors for General Purpose

MuRataMurata Manufacturing Co., Ltd.

村田村田制作所

GRM188R60J106ME47_V01

Ceramic Capacitors(SMD)

Specifications 180mmPaperTape 330mmPaperTape

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

GRM188R60J106ME47D

CHIP MONOLITHIC CERAMIC CAPACITOR

GRMseries/Hi-Cap(1uFandover) Features 1.TAchipcapacitorreplacementproductlineupisavailableinX7R(X7S,X7T,X7U),X6S(X6T)andX5Rtemperaturecharacteristicswithacapacitanceof1uFandlarger. 2.Thelineofhighvolumetriccapacitanceceramicchipcapacitorsisavailablein

MuRataMurata Manufacturing Co., Ltd.

村田村田制作所

GRM188R60J106ME47D

Ceramic Capacitors(SMD)

Specifications 180mmPaperTape 330mmPaperTape

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

GRM188R60J106ME47D

System power IC

2.Features ?AVCCinputvoltagerange:4.5Vto5.5V ?DCDCconverter(CH1andCH2) Powervoltage range Outputvoltage (*1)Outputcurrent CH13.6Vto5.5V1.05V2A CH24.3Vto5.5V3.3V2A 4.0Vto5.5V3.3V300mA ?SynchronousCurrentModeBuckConverters ?Outputcurrent2Aandmore

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

GRM188R60J106ME47D

DPD Demodulator for PA Linearization, 1300MHz to 2900MHz

FEATURES(IORQPATH) ?WideflatperformanceIFBW ?WideRFandLOBWs(~1.6GHz) ?IdealforMulti-CarrierSystems ?DrivesADCdirectly ?Ultralinear+41dBmIP3O ?LowNoiseFigure ?ExcellentACLRperformance ?200Ωoutputimpedance ?FullyintegratedDPDdemodulator ?6x636pin

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

GRM188R60J106ME47D

Wide Input and Ultra-Low Quiescent Current Boost Converter with High Efficiency

GeneralDescription TheRT4823integratesbuilt-inpowertransistors, synchronousrectification,andlowsupplycurrentto provideacompactsolutionforsystemsusingadvanced Li-Ionbatterychemistries.TheRT4823iscapableof supplyingsignificantenergywhenthebatteryvoltageis lower

RichTekRichtek Technology Corporation

立锜科技股份有限公司

GRM188R60J106ME47D

Ideal for Multi-Carrier Systems

FEATURES ?IdealforMulti-CarrierSystems ?LowsideorHighsideLO ?11.8dBGain ?Ultralinear+43dBmIP3OusingHSLOor +37.5dBmIP3OusingLSLO ?9.7dBNF ?200Ωoutputimpedance ?Wideflat-performanceIFBW ?DrivesADCdirectlyforDPDapplications ?LowPowerConsumption ?5

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

GRM188R60J106ME47D

Ideal for Multi-Carrier Systems

FEATURES ?IdealforMulti-CarrierSystems ?LowsideorHighsideLO ?11.7dBGain ?Ultralinear+45dBmIP3OusingHSLOor +42dBmIP3OusingLSLO ?9.7dBNF ?200Ωoutputimpedance ?WideflatperformanceIFBW ?DrivesADCdirectlyforDPDapplications ?LowPowerConsumption ?5x5

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

GRM188R60J106ME47J

Ceramic Capacitors(SMD)

Specifications 180mmPaperTape 330mmPaperTape

MURATA1Murata Manufacturing Co., Ltd

村田村田制作所

GRM188R60J106ME47D

LAUNCHXL-F28379D Overview

TITexas Instruments

德州儀器美國德州儀器公司

GRM188R60J106ME47D

RF to IF Dual Downconverting Mixer

IDT

Integrated Device Technology, Inc.

GRM188R60J106ME47D

DRV2603 ERM/LRA Haptic Driver Evaluation Kit

TI1Texas Instruments

德州儀器

詳細參數(shù)

  • 型號：

    GRM188R60J106ME47

  • 功能描述：

    多層陶瓷電容器MLCC - SMD/SMT 0603 10uF 6.3volts X5R 20%

  • RoHS：

    否

  • 制造商：

    American Technical Ceramics(ATC)

  • 電容：

    10 pF

  • 容差：

    1 %

  • 電壓額定值：

    250 V

  • 溫度系數(shù)/代碼：

    C0G(NP0) 外殼代碼 -

  • in：

    0505 外殼代碼 -

  • mm：

    1414

  • 工作溫度范圍：

    - 55 C to + 125 C

  • 產(chǎn)品：

    Low ESR MLCCs

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
MURATA/村田
2019+
SMD
900000
原廠渠道 可含稅出貨
 詢價
ST
2021++
SOT23-6
10000
原裝正品 清庫存低價出
 詢價
MURATA(村田)
23+
NA
20094
正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持
 詢價
村田(muRata)
23+
SMD
100000
原裝現(xiàn)貨、價格優(yōu)勢、可開發(fā)票
 詢價
MURATA/村田
24+
SMD
240000
主營村田全系列電容只做原裝
 詢價
MURATA
4000
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
MURATA
14+
200000
詢價
MURATA
2016+
SMD
4000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
muRata
17+
SMD
100000
原裝正品現(xiàn)貨
 詢價
MURATA
24+
17+
4
SMD
詢價
更多GRM188R60J106ME47供應(yīng)商 更新時間2025-1-12 16:04:00

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