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GP10NB37LZ

10 A - 410 V internally clamped IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thebuiltincollector-gateZenerexhibits averypreciseactiveclampingwhilethegateemitterZenersuppliesanESDprotection. Feat

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

GB10NB37LZ

10A-410VinternallyclampedIGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thebuiltincollector-gateZenerexhibits averypreciseactiveclampingwhilethegateemitterZenersuppliesanESDprotection. Feat

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB10NB37LZ

N-CHANNELCLAMPED20A-D2PAKINTERNALLYCLAMPEDPowerMeshTMIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB10NB37LZ

N-CHANNELCLAMPED10AD2PAKINTERNALLYCLAMPEDPowerMESHIGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thebuiltincollector-gatezenerexhibitsaverypreciseactiveclampingwhilethegate-emitt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB10NB37LZ

10A-410VinternallyclampedIGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thebuiltincollector-gateZenerexhibits averypreciseactiveclampingwhilethegateemitterZenersuppliesanESDprotection. Feat

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10NB37LZ

10A-410VinternallyclampedIGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior.Thebuiltincollector-gateZenerexhibits averypreciseactiveclampingwhilethegateemitterZenersuppliesanESDprotection. Feat

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGP10NB37LZ

N-CHANNELCLAMPED20A-TO-220INTERNALLYCLAMPEDPowerMesh??IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thebuiltincollector-gatezenerexhibitsaverypreciseactiveclampingwhilethegate-emitt

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

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23+
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5000
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1926+
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只做原裝正品現(xiàn)貨!或訂貨假一賠十!
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23+
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4500
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售
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ST
23+
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61847
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2023+
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3872
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ST
23+
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65480
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23+
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10000
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22+
6000
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25000
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23+
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26000
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更多GP10NB37LZ供應(yīng)商 更新時(shí)間2025-1-23 15:36:00