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GFC9130

P Channel Power MOSFET

GSG

Gunter Seniconductor GmbH.

GM9130HV

3ALEDDriverwithDimmingControl

GAMMA

GAMMA electronics

HDM9130

FrequencySynthesizer

SHOULDERShoulder

好達(dá)電子無錫市好達(dá)電子股份有限公司

I9130CFI

ISDCortex??M0ChipCorder

NuvotonNuvoton Technology Corporation

新唐科技新唐科技股份有限公司

I9130CYI

ISDCortex??M0ChipCorder

NuvotonNuvoton Technology Corporation

新唐科技新唐科技股份有限公司

IRF9130

-12A,-100V,0.30Ohm,P-ChannelPowerMOSFET

-12A,-100V,0.30Ohm,P-ChannelPowerMOSFET TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe

Intersil

Intersil Corporation

IRF9130

TRANSISTORSP-CHANNEL(Vdss=-100V,Rds(on)=0.30ohm,Id=-11A)

ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorrever

IRF

International Rectifier

IRF9130

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF9130

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF9130

P??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRF9130

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF9130SMD

P-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFE9130

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTOR

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTOR Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitythe

IRF

International Rectifier

IRFE9130

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFE9130

SimpleDriveRequirements

IRF

International Rectifier

IRFF9130

POWERMOSFETP-CHANNEL(BVdss=-100V,Rds(on)=0.30ohm,Id=-6.5A)

REPETITIVEAVALANCHEANDdv/dtRATED HEXFET?TRANSISTORS THRU-HOLE-TO-205AF(TO-39) TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylow

IRF

International Rectifier

IRFF9130

-6.5A,-100V,0.300Ohm,P-ChannelPowerMOSFET

-6.5A,-100V,0.300Ohm,P-ChannelPowerMOSFET ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETs

Intersil

Intersil Corporation

IRFF9130

P-ChannelMOSFETinaHermeticallysealedTO39

SEME-LAB

Seme LAB

IRFF9130

P-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFF9130

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

-5.5Aand-6.5A,-60Vand-100VrDS(on)=0.30Ωand0.40Ω TheIRFF9130,IRFF9131,IRFF9132andIRFF9133areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Thesearep-channelenhancement-modesilicon-gat

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號：

    GFC9130

  • 制造商：

    GSG

  • 制造商全稱：

    GSG

  • 功能描述：

    P Channel Power MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
OSRAM
2019+
SMD
6000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價
OSRAM
ROHS+Original
原廠原封元件
600
原裝現(xiàn)貨 庫存特價/長期供應(yīng)元器件代理經(jīng)銷
 詢價
OSRAM
20000
詢價
OSRAM/歐司朗
23+
LED
15000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
OSRAM
2010+
N/A
23
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 詢價
24+
N/A
56000
一級代理-主營優(yōu)勢-實(shí)惠價格-不悔選擇
 詢價
AMS OSRAM
3000
2023
6000
全新、原裝
 詢價
OSRAM
2022+2023+
n/a
600
全新、原裝
 詢價
OSRAM(歐司朗)
23+
SMD3030
6000
誠信服務(wù)，絕對原裝原盤
 詢價
OSRAM
2023
NA
3600
原廠代理渠道,正品保障
 詢價
更多GFC9130供應(yīng)商 更新時間2024-12-24 22:30:00

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